RENESAS 2SK1288-AZ

The D³PAK package accommodates the largest die of any standard plastic SMT power semiconductor. This makes it suitable for applications requiring higher power and lower RDS(on) surface-mount components. This high-voltage MOSFET employs an advanced termination structure that enhances voltage blocking capability without performance degradation over time. Additionally, this advanced TMOS E-FET is designed to withstand high energy in avalanche and commutation modes. This new energy-efficient design also features a drain-source diode with fast recovery time. Specifically designed for surface-mount PWM motor control and low-voltage, high-speed switching applications in AC/DC and DC power supplies. These devices are particularly well-suited for bridge circuits where diode speed and commutation safe operating area are critical, while providing additional safety margin against inadvertent voltage transients.

• Rugged high-voltage termination
• Specified avalanche energy
• Source-drain diode recovery time comparable to discrete fast-recovery diodes
• Diode suitable for bridge circuits
• Specified IDSS and VDS(on) at high temperature
• Short heatsink lead formed, not cropped
• Lead frame designed for maximum power dissipation
• Available in 24mm, 13-inch/500-unit tape and reel packaging with model suffix -RL

• Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, home electronics and appliances, machine tools, personal electronic devices, and industrial robots.
• High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical equipment not specifically intended for life support.