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FUXINSEMI FS2310
| Fabricante | FUXINSEMIAsian Brands |
| N.º de pieza fab. | FS2310 |
| Nº LCSC | C3018481 |
| Emb. | SOT-23 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 60V 3A SOT-23 |
| Hoja de Datos | FUXINSEMI FS2310 |
| Piezas alternativas | 2 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 330pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 330pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
WSK150N12 is a high-performance trench N-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. WSK150N12 is RoHS-compliant and meets green product requirements, 100% tested for avalanche energy capability (E<sub>AS</sub>), and has passed comprehensive reliability qualification.
Características
Traducción por IA
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Aplicaciones
Traducción por IA
- Load Switch for Portable Devices
- DC/DC Converter
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 420
420 En stock, envío inmediato
Mínimo: 10Múltiplo: 10Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 10+ | $ 0.0238 | $ 0.24 |
| 100+ | $ 0.0213 | $ 2.13 |
| 300+ | $ 0.0209 | $ 6.27 |
| 1,000+ | $ 0.0203 | $ 20.30 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 330pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 90pF | |
| Ciss-Input Capacitance | 330pF | |
| Pd - Power Dissipation | 1.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 5.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
WSK150N12 is a high-performance trench N-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. WSK150N12 is RoHS-compliant and meets green product requirements, 100% tested for avalanche energy capability (E<sub>AS</sub>), and has passed comprehensive reliability qualification.
Características
Traducción por IA
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Aplicaciones
Traducción por IA
- Load Switch for Portable Devices
- DC/DC Converter
C3018481 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |