Imágenes ilustrativas
Modelos EDAEasyEDA
EPC EPC8004
| Fabricante | |
| N.º de pieza fab. | EPC8004 |
| Nº LCSC | C6944326 |
| Emb. | SMD,2.1x0.9mm |
| Número de Cliente | |
| Atrib. clave | 40V 4A 110mΩ@5V 1 N-channel N-Channel SMD,2.1x0.9mm Single FETs, MOSFETs RoHS |
| Hoja de Datos | EPC EPC8004 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | EPC | |
| Emb. | SMD,2.1x0.9mm | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 52pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 110mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 450pC@5V | |
| Vgs | ±6V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | EPC | |
| Emb. | SMD,2.1x0.9mm | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 52pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 110mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 450pC@5V | |
| Vgs | ±6V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Descripción
Traducción por IA
GaN features extremely high electron mobility and a low temperature coefficient, enabling ultra-low on-resistance RDS(on), while its lateral device structure and majority-carrier diode deliver ultra-low gate charge QG and zero reverse recovery charge QRR. The end result is a device capable of handling both applications demanding extremely high switching frequencies and short on-times, as well as those dominated by conduction losses.
Características
Traducción por IA
- Ultra-high efficiency
- Ultra-low on-resistance RDS(on)
- Ultra-low gate charge QG
- Ultra-compact package size
Aplicaciones
Traducción por IA
- Ultra-high-speed DC-DC conversion
- RF envelope tracking
- Wireless power transfer
- Gaming and industrial motion sensing (LiDAR)
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 87
87 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 5.8563 | $ 5.86 |
| 10+ | $ 5.0508 | $ 50.51 |
| 30+ | $ 4.5735 | $ 137.21 |
| 100+ | $ 4.0896 | $ 408.96 |
| 500+ | $ 3.8665 | $ 1933.25 |
| 1,000+ | $ 3.7648 | $ 3764.80 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | EPC | |
| Emb. | SMD,2.1x0.9mm | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 52pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 110mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 450pC@5V | |
| Vgs | ±6V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | EPC | |
| Emb. | SMD,2.1x0.9mm | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 52pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 110mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 450pC@5V | |
| Vgs | ±6V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
GaN features extremely high electron mobility and a low temperature coefficient, enabling ultra-low on-resistance RDS(on), while its lateral device structure and majority-carrier diode deliver ultra-low gate charge QG and zero reverse recovery charge QRR. The end result is a device capable of handling both applications demanding extremely high switching frequencies and short on-times, as well as those dominated by conduction losses.
Características
Traducción por IA
- Ultra-high efficiency
- Ultra-low on-resistance RDS(on)
- Ultra-low gate charge QG
- Ultra-compact package size
Aplicaciones
Traducción por IA
- Ultra-high-speed DC-DC conversion
- RF envelope tracking
- Wireless power transfer
- Gaming and industrial motion sensing (LiDAR)
C6944326 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |