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Modèles EDAEasyEDA
MICROCHIP 2N6294
| Fabricant | |
| Réf. Fab. | 2N6294 |
| Réf. LCSC | C5487732 |
| Condit. | TO-66(TO-213AA) |
| Numéro Client | |
| Caract. clés | 60V 750@3V,2A 4A NPN TO-66(TO-213AA) Single Bipolar Transistors |
| Fiche Technique | MICROCHIP 2N6294 |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | MICROCHIP | |
| Condit. | TO-66(TO-213AA) | |
| Vbe Saturation(VBE(sat)) | 4V | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750@3V,2A | |
| Pd - Power Dissipation | 50W | |
| Current - Collector(Ic) | 4A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V@40mA,4A |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | MICROCHIP | |
| Condit. | TO-66(TO-213AA) | |
| Vbe Saturation(VBE(sat)) | 4V | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750@3V,2A | |
| Pd - Power Dissipation | 50W | |
| Current - Collector(Ic) | 4A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V@40mA,4A |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
designed for general-purpose amplifier, low-frequency switching and hammer driver applications.
Caractéristiques
Traduction par IA
- High DC Current Gain- h_FE = 3000 (Typ) @ I_c = 2.0 Adc
- Low Collector-Emitter Saturation Voltage- V_CE(sat) = 2.0 Vdc (Max) @ I_C = 2.0 Adc
- Collector-Emitter Sustaining Voltage: V_CEO(sus) = 60 Vdc (Min)- 2N6294, 2N6296; = 80 Vdc (Min)- 2N6295, 2N6297
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Applications
Traduction par IA
- general-purpose amplifier
- low-frequency switching
- hammer driver
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 69.8174 | $ 69.82 |
| 200+ | $ 27.8588 | $ 5571.76 |
| 500+ | $ 26.9269 | $ 13463.45 |
| 1,000+ | $ 26.4678 | $ 26467.80 |
Boîtier Standard100/Full Bag | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | MICROCHIP | |
| Condit. | TO-66(TO-213AA) | |
| Vbe Saturation(VBE(sat)) | 4V | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750@3V,2A | |
| Pd - Power Dissipation | 50W | |
| Current - Collector(Ic) | 4A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V@40mA,4A |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | MICROCHIP | |
| Condit. | TO-66(TO-213AA) | |
| Vbe Saturation(VBE(sat)) | 4V | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -65℃~+200℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750@3V,2A | |
| Pd - Power Dissipation | 50W | |
| Current - Collector(Ic) | 4A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V@40mA,4A |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
designed for general-purpose amplifier, low-frequency switching and hammer driver applications.
Caractéristiques
Traduction par IA
- High DC Current Gain- h_FE = 3000 (Typ) @ I_c = 2.0 Adc
- Low Collector-Emitter Saturation Voltage- V_CE(sat) = 2.0 Vdc (Max) @ I_C = 2.0 Adc
- Collector-Emitter Sustaining Voltage: V_CEO(sus) = 60 Vdc (Min)- 2N6294, 2N6296; = 80 Vdc (Min)- 2N6295, 2N6297
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Applications
Traduction par IA
- general-purpose amplifier
- low-frequency switching
- hammer driver
C5487732 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Détails |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Détails |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| 2N6301P | MICROCHIP | TO-66(TO-213AA) | 0 | $ 91.9292 | ||
| JANTX2N6301 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 89.8935 | ||
| 2N6300 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 69.8174 | ||
| JANTXV2N6300 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 102.3846 | ||
| JAN2N6300 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 77.3712 | ||
| 2N6301 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 70.5068 | ||
| JANTX2N6301P | MICROCHIP | TO-66(TO-213AA) | 0 | $ 104.9117 | ||
| JAN2N6301P | MICROCHIP | TO-66(TO-213AA) | 0 | $ 95.2517 | ||
| JANTXV2N6301P | MICROCHIP | TO-66(TO-213AA) | 0 | $ 120.2782 | ||
| 2N6352 | MICROCHIP | TO-66(TO-213AA) | 0 | $ 77.5196 |