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Modelos EDAEasyEDA
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | ST | |
| Emb. | SOT-32-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | ST | |
| Emb. | SOT-32-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Tipo | Descripción | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
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Descripción
Traducción por IA
These devices are fabricated using planar base island technology with a monolithic Darlington configuration.
Características
Traducción por IA
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated anti-parallel collector-emitter diode
Aplicaciones
Traducción por IA
- Linear and switching industrial equipment
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.4057 | $ 0.41 |
| 10+ | $ 0.3255 | $ 3.26 |
| 50+ | $ 0.2916 | $ 14.58 |
| 100+ | $ 0.2484 | $ 24.84 |
| 500+ | $ 0.2283 | $ 114.15 |
| 1,000+ | $ 0.2175 | $ 217.50 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | ST | |
| Emb. | SOT-32-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | ST | |
| Emb. | SOT-32-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Tipo | Descripción | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These devices are fabricated using planar base island technology with a monolithic Darlington configuration.
Características
Traducción por IA
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated anti-parallel collector-emitter diode
Aplicaciones
Traducción por IA
- Linear and switching industrial equipment
C283399 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |