Techcode TDM3426B
| Hersteller | TechcodeAsian Brands |
| Herst.-Teilenr. | TDM3426B |
| LCSC-Nr. | C189992 |
| Verp. | SOT-89 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 18A SOT-89 |
| Datenblatt | Techcode TDM3426B |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Techcode | |
| Verp. | SOT-89 | |
| Output Capacitance(Coss) | 318pF | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 18A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Techcode | |
| Verp. | SOT-89 | |
| Output Capacitance(Coss) | 318pF | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 18A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Merkmale
KI-Übersetzung
- RDS(ON) < 16mΩ @ VG5 = 4.5V
- RDS(ON) < 10mΩ @ VGS = 10V
- High Power and current handling capability
- Lead free product is available
- Surface Mount Package
Anwendungen
KI-Übersetzung
- PWM applications
- Load switch
- Power management
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,600
1,600 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3077 | $ 1.54 |
| 50+ | $ 0.2378 | $ 11.89 |
| 150+ | $ 0.2078 | $ 31.17 |
| 500+ | $ 0.1704 | $ 85.20 |
| 3,000+ | $ 0.1537 | $ 461.10 |
| 6,000+ | $ 0.1437 | $ 862.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Techcode | |
| Verp. | SOT-89 | |
| Output Capacitance(Coss) | 318pF | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 18A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Techcode | |
| Verp. | SOT-89 | |
| Output Capacitance(Coss) | 318pF | |
| Ciss-Input Capacitance | 600pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 18A | |
| Reverse Transfer Capacitance (Crss) | 22pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Merkmale
KI-Übersetzung
- RDS(ON) < 16mΩ @ VG5 = 4.5V
- RDS(ON) < 10mΩ @ VGS = 10V
- High Power and current handling capability
- Lead free product is available
- Surface Mount Package
Anwendungen
KI-Übersetzung
- PWM applications
- Load switch
- Power management
C189992 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
