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Modelos EDAEasyEDA
onsemi MJD200T4G
| Fabricante | |
| N.º de pieza fab. | MJD200T4G |
| Nº LCSC | C146802 |
| Emb. | TO-252-2(DPAK) |
| Número de Cliente | |
| Atrib. clave | 25V 76 5A 1 NPN NPN TO-252-2(DPAK) Single Bipolar Transistors RoHS |
| Hoja de Datos | onsemi MJD200T4G |
| Cumplimiento RoHS | 4 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-252-2(DPAK) | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 65MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 76 | |
| Pd - Power Dissipation | 12.5W | |
| Current - Collector(Ic) | 5A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-252-2(DPAK) | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 65MHz | |
| Collector - Emitter Voltage VCEO | 25V |
| Tipo | Descripción | |
|---|---|---|
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 76 | |
| Pd - Power Dissipation | 12.5W | |
| Current - Collector(Ic) | 5A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 16
16 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 0.5687 | $ 0.57 |
| 10+ | $ 0.5605 | $ 5.61 |
| 30+ | $ 0.554 | $ 16.62 |
| 100+ | $ 0.5475 | $ 54.75 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-252-2(DPAK) | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 65MHz | |
| Collector - Emitter Voltage VCEO | 25V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 76 | |
| Pd - Power Dissipation | 12.5W | |
| Current - Collector(Ic) | 5A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-252-2(DPAK) | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 65MHz | |
| Collector - Emitter Voltage VCEO | 25V |
| Tipo | Descripción | |
|---|---|---|
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 76 | |
| Pd - Power Dissipation | 12.5W | |
| Current - Collector(Ic) | 5A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
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C146802 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |