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HUASHUO HSS2319
| Fabricante | HUASHUOAsian Brands |
| N.º de pieza fab. | HSS2319 |
| Nº LCSC | C700956 |
| Emb. | SOT-23L |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH 40V 3.2A SOT-23L |
| Hoja de Datos | HUASHUO HSS2319 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 2 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | HUASHUO | |
| Emb. | SOT-23L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 620pF | |
| Pd - Power Dissipation | 1.32W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 53pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | HUASHUO | |
| Emb. | SOT-23L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 620pF | |
| Pd - Power Dissipation | 1.32W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 53pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The HSS2319 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2919 meet the RoHS and Green Product requirement with full function reliability approved.
Características
Traducción por IA
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 2,750
2,750 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.086 | $ 0.43 |
| 50+ | $ 0.0687 | $ 3.44 |
| 150+ | $ 0.06 | $ 9.00 |
| 500+ | $ 0.0536 | $ 26.80 |
| 3,000+ | $ 0.0451 | $ 135.30 |
| 6,000+ | $ 0.0425 | $ 255.00 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | HUASHUO | |
| Emb. | SOT-23L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 620pF | |
| Pd - Power Dissipation | 1.32W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 53pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | HUASHUO | |
| Emb. | SOT-23L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 620pF | |
| Pd - Power Dissipation | 1.32W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 53pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The HSS2319 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2919 meet the RoHS and Green Product requirement with full function reliability approved.
Características
Traducción por IA
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
C700956 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |