Infineon S25HL02GTDZBHB050

Infineon utilizes 45nm MIRRORBIT™ technology to store two data bits per memory array cell, available in Multi-Chip Package (MCP) configurations including 02GT Dual Die Package (DDP) 2×1Gb die and 04GT Quad Die Package (QDP) 4×1Gb die. Sector architecture options include uniform and hybrid configurations. Features a 256 or 512-byte page program buffer and a 1024-byte (32×32 bytes) OTP security silicon array. Interface support covers Quad SPI, Dual SPI, and SPI with various protocol and speed options. Security and protection features include functional safety, data integrity CRC, SafeBoot, and built-in ECC. Regarding data integrity, the main array supports a minimum of 2,560,000 program/erase cycles, 4KB sectors support a minimum of 300,000 program/erase cycles, and data retention is guaranteed for a minimum of 25 years. Supply voltage options are 1.7V to 2.0V (HS-T) and 2.7V to 3.6V (HL-T), with multiple temperature grades and a 24-ball BGA 8×8mm package.

• Functional safety NOR Flash compliant with ISO 26262 ASIL B and supporting ASIL D
• Durability flex architecture for high endurance and long retention partitions
• Data integrity CRC detection for memory array errors
• SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery options
• Built-in ECC corrects single-bit errors and detects double-bit errors in memory array data
• Sector erase status indicator for power-loss protection during erase operations
• Legacy block protection for memory array and device configuration
• Advanced sector protection for individual memory array sector-based protection
• Hardware reset supporting CS# signal method, dedicated RESET# pin, and DQ3_RESET# pin