Infineon IRF6637TRPBF
| Fabricant | |
| Réf. Fab. | IRF6637TRPBF |
| Réf. LCSC | C537788 |
| Condit. | MG-WDSON-5 |
| Numéro Client | |
| Caract. clés | 2.3W 30V 14A 5.7mΩ@10V 1 N-channel N-Channel MG-WDSON-5 Single FETs, MOSFETs RoHS |
| Fiche Technique | Infineon IRF6637TRPBF |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 5 |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | MG-WDSON-5 | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 150pF | |
| RDS(on) | 5.7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.35V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | MG-WDSON-5 | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 150pF | |
| RDS(on) | 5.7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.35V | |
| Type | N-Channel |
Description
The IRF6637PbF combines the latest HEXFET power MOSFET silicon technology with the advanced DirectFET package, achieving the lowest on-resistance in a package with SO-8 footprint and only 0.7 mm height. When following the manufacturing methods and processes described in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-sided cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best.
The IRF6637PbF balances low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6637PbF is optimized for parameters critical in synchronous buck operation derived from 12 V bus converters, including on-resistance RDS(on) and gate charge, to minimize losses in the control FET slot.
Caractéristiques
- RoHS compliant
- Lead-free (reflow soldering up to 260°C)
- Dedicated MOSFET
- Low conduction and switching losses
- Low profile (<0.7mm)
- Dual-sided heat dissipation
- Compatible with existing SMT
Applications
- CPU Core DC-DC Converter
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.9143 | $ 0.91 |
| 200+ | $ 0.3534 | $ 70.68 |
| 500+ | $ 0.3421 | $ 171.05 |
| 1,000+ | $ 0.3356 | $ 335.60 |
Boîtier Standard4800/Full Reel | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | MG-WDSON-5 | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 150pF | |
| RDS(on) | 5.7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.35V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | MG-WDSON-5 | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 150pF | |
| RDS(on) | 5.7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.35V | |
| Type | N-Channel |
Description
The IRF6637PbF combines the latest HEXFET power MOSFET silicon technology with the advanced DirectFET package, achieving the lowest on-resistance in a package with SO-8 footprint and only 0.7 mm height. When following the manufacturing methods and processes described in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-sided cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best.
The IRF6637PbF balances low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6637PbF is optimized for parameters critical in synchronous buck operation derived from 12 V bus converters, including on-resistance RDS(on) and gate charge, to minimize losses in the control FET slot.
Caractéristiques
- RoHS compliant
- Lead-free (reflow soldering up to 260°C)
- Dedicated MOSFET
- Low conduction and switching losses
- Low profile (<0.7mm)
- Dual-sided heat dissipation
- Compatible with existing SMT
Applications
- CPU Core DC-DC Converter
C537788 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Type alternatif | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|---|
| IRF6785MTRPBF | Infineon | Similaires | MG-WDSON-5 | 2 | $ 6.7292 | ||
| IRF6617TRPBF | Infineon | Similaires | MG-WDSON-5 | 20 | $0.6444 $3.7905 | ||
| IRF6613TRPBF | Infineon | Similaires | MG-WDSON-5 | 48 | $ 1.5554 | ||
| IRF8302MTRPBF | Infineon | Similaires | MG-WDSON-5 | 6 | $0.9295 $5.4675 | ||
| IRF6722MTRPBF | Infineon | Similaires | MG-WDSON-5 | 0 | $ 1.312 |