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UTC 4N65KL-TF1-T
| Fabricante | UTCAsian Brands |
| N.º de pieza fab. | 4N65KL-TF1-T |
| Nº LCSC | C427620 |
| Emb. | TO-220F1 |
| Número de Cliente | |
| Atrib. clave | 36W 650V 4A 4V 2.5Ω@10V 1 N-channel N-Channel TO-220F1 Single FETs, MOSFETs |
| Hoja de Datos | UTC 4N65KL-TF1-T |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-220F1 | |
| Output Capacitance(Coss) | 54pF | |
| Pd - Power Dissipation | 36W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-220F1 | |
| Output Capacitance(Coss) | 54pF | |
| Pd - Power Dissipation | 36W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
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Descripción
Traducción por IA
UTC 4N65K-TC is a high-voltage power MOSFET featuring superior characteristics such as fast switching time, low gate charge, low on-resistance, and high robustness avalanche capability. This power MOSFET is commonly used in high-speed switching applications including power supplies, PWM motor control, high-efficiency DC-DC converters, and bridge circuits.
Características
Traducción por IA
- R DS(ON) < 2.5Ω at V GS = 10 V, I D = 2.0 A
- Fast switching capability
- Specified avalanche energy
- Improved dv/dt capability, high robustness
Aplicaciones
Traducción por IA
- Power Supply
- PWM Motor Control
- High-Efficiency DC-DC Converter
- Bridge Circuit
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Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.4132 | $ 0.41 |
| 10+ | $ 0.3513 | $ 3.51 |
| 50+ | $ 0.3248 | $ 16.24 |
| 100+ | $ 0.2917 | $ 29.17 |
| 500+ | $ 0.277 | $ 138.50 |
| 1,000+ | $ 0.2681 | $ 268.10 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-220F1 | |
| Output Capacitance(Coss) | 54pF | |
| Pd - Power Dissipation | 36W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-220F1 | |
| Output Capacitance(Coss) | 54pF | |
| Pd - Power Dissipation | 36W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 490pF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
UTC 4N65K-TC is a high-voltage power MOSFET featuring superior characteristics such as fast switching time, low gate charge, low on-resistance, and high robustness avalanche capability. This power MOSFET is commonly used in high-speed switching applications including power supplies, PWM motor control, high-efficiency DC-DC converters, and bridge circuits.
Características
Traducción por IA
- R DS(ON) < 2.5Ω at V GS = 10 V, I D = 2.0 A
- Fast switching capability
- Specified avalanche energy
- Improved dv/dt capability, high robustness
Aplicaciones
Traducción por IA
- Power Supply
- PWM Motor Control
- High-Efficiency DC-DC Converter
- Bridge Circuit
C427620 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| DOPF5N65 | DOINGTER | Similares | TO-220F | 980 | $0.1973 $0.2144 | ||
| F4N65 | Jingdao Microelectronics | Similares | ITO-220AB-3 | 265 | $ 0.2013 | ||
| 4N65L-ML-TF3-T | UTC | Similares | TO-220F | 32 | $ 0.4268 | ||
| SVF4N70F | Hangzhou Silan Microelectronics | Similares | TO-220F | 55 | $ 0.3573 | ||
| YFW4N65AF | YFW | Similares | TO-220F | 35 | $0.2459 $0.3073 |
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