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EDA-ModelleEasyEDA
MDD(Microdiode Semiconductor) MDD2300
| Hersteller | MDD(Microdiode Semiconductor)Asian Brands |
| Herst.-Teilenr. | MDD2300 |
| LCSC-Nr. | C427387 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 20V 6.2A SOT-23 |
| Datenblatt | MDD(Microdiode Semiconductor) MDD2300 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MDD(Microdiode Semiconductor) | |
| Verp. | SOT-23 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 71pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF | |
| RDS(on) | 21.7mΩ@4.5V;29mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 457pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MDD(Microdiode Semiconductor) | |
| Verp. | SOT-23 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 71pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF | |
| RDS(on) | 21.7mΩ@4.5V;29mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 457pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Anwendungen
KI-Übersetzung
- Load switch
- DC/DC converter
- Switching circuit
- Power management
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 9,440
9,440 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0272$ 0.0256 | $ 0.51 |
| 200+ | $ 0.0219$ 0.0206 | $ 4.12 |
| 600+ | $ 0.0189$ 0.0178 | $ 10.68 |
| 3,000+ | $ 0.0165$ 0.0156 | $ 46.80 |
| 9,000+ | $ 0.0149$ 0.0141 | $ 126.90 |
| 21,000+ | $ 0.0141$ 0.0133 | $ 279.30 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MDD(Microdiode Semiconductor) | |
| Verp. | SOT-23 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 71pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF | |
| RDS(on) | 21.7mΩ@4.5V;29mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 457pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MDD(Microdiode Semiconductor) | |
| Verp. | SOT-23 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 71pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF | |
| RDS(on) | 21.7mΩ@4.5V;29mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 457pF | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Anwendungen
KI-Übersetzung
- Load switch
- DC/DC converter
- Switching circuit
- Power management
C427387 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| MDD2312 | MDD(Microdiode Semiconductor) | Ähnliche | SOT-23 | 2,940 | $0.0298 $0.0317 | ||
| MDD08N10A | MDD(Microdiode Semiconductor) | Ähnliche | SOT-23 | 1,390 | $0.0449 $0.0477 | ||
| MDD3400 | MDD(Microdiode Semiconductor) | Ähnliche | SOT-23 | 89,880 | $ 0.0389 | ||
| MDD3404 | MDD(Microdiode Semiconductor) | Ähnliche | SOT-23 | 238 | $0.0371 $0.0394 | ||
| AO3400-5.8A | MDD(Microdiode Semiconductor) | Ähnliche | SOT-23 | 0 | $ 0.4587 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen