onsemi HUF76129D3S
| Fabricante | |
| N.º de pieza fab. | HUF76129D3S |
| Nº LCSC | C3290977 |
| Emb. | TO-252-3(DPAK) |
| Número de Cliente | |
| Atrib. clave | 30V 20A 3V 105W 16mΩ@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs |
| Hoja de Datos | onsemi HUF76129D3S |
| Piezas alternativas | 5 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.425nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.425nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
Descripción
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can sustain high energy in avalanche mode, and the diodes feature extremely short reverse recovery time and minimal stored charge. They are specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Características
- Logic-level gate drive
- 20A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.016 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Aplicaciones
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.5972 | $ 0.60 |
| 200+ | $ 0.2315 | $ 46.30 |
| 500+ | $ 0.2238 | $ 111.90 |
| 1,000+ | $ 0.2192 | $ 219.20 |
Encapsulado Estándar2500/Full Reel | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.425nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.425nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Type | N-Channel |
Descripción
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can sustain high energy in avalanche mode, and the diodes feature extremely short reverse recovery time and minimal stored charge. They are specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Características
- Logic-level gate drive
- 20A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.016 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Aplicaciones
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| CMD50N10 | Cmos | Similares | TO-252 | 165 | $0.3533 $0.3718 | ||
| HY1506D | HUAYI | Similares | TO-252-2L | 1,497 | $ 0.259 | ||
| STD35NF06L(UMW) | UMW | Similares | TO-252 | 2,420 | $ 0.3428 | ||
| IRLR2905ZTRPBF | Infineon | Similares | TO-252 | 2,065 | $ 0.6471 | ||
| STU2240NL-VB | VBsemi Elec | Similares | TO-252 | 20 | $0.4387 $0.5161 |