onsemi FJA4313RTU
| Fabricante | |
| N.º de pieza fab. | FJA4313RTU |
| Nº LCSC | C3201319 |
| Emb. | TO-3PN |
| Número de Cliente | |
| Atrib. clave | 250V 55 17A 1 NPN NPN TO-3PN Single Bipolar Transistors |
| Hoja de Datos | onsemi FJA4313RTU |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-3PN | |
| Current - Collector Cutoff | 5uA | |
| Operating Temperature | -50℃~+150℃ | |
| Transition frequency(fT) | 30MHz | |
| Collector - Emitter Voltage VCEO | 250V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 55 | |
| Pd - Power Dissipation | 130W | |
| Current - Collector(Ic) | 17A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-3PN | |
| Current - Collector Cutoff | 5uA | |
| Operating Temperature | -50℃~+150℃ | |
| Transition frequency(fT) | 30MHz | |
| Collector - Emitter Voltage VCEO | 250V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 55 | |
| Pd - Power Dissipation | 130W | |
| Current - Collector(Ic) | 17A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
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Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 2.6432 | $ 2.64 |
| 200+ | $ 1.023 | $ 204.60 |
| 500+ | $ 0.9876 | $ 493.80 |
| 1,000+ | $ 0.969 | $ 969.00 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-3PN | |
| Current - Collector Cutoff | 5uA | |
| Operating Temperature | -50℃~+150℃ | |
| Transition frequency(fT) | 30MHz | |
| Collector - Emitter Voltage VCEO | 250V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 55 | |
| Pd - Power Dissipation | 130W | |
| Current - Collector(Ic) | 17A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | TO-3PN | |
| Current - Collector Cutoff | 5uA | |
| Operating Temperature | -50℃~+150℃ | |
| Transition frequency(fT) | 30MHz | |
| Collector - Emitter Voltage VCEO | 250V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 55 | |
| Pd - Power Dissipation | 130W | |
| Current - Collector(Ic) | 17A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

