Infineon FD1000R33HL3K

Fabricant	Infineon
Réf. Fab.	FD1000R33HL3K
Réf. LCSC	C3198636
Condit.	-
Numéro Client
Caract. clés	11.5kW 1kA 3.3kV FS (Field Stop) IGBT Modules RoHS
Fiche Technique	Infineon FD1000R33HL3K
Conformité RoHS	1 documents disponibles

Spécifications du Produit

Tout

Type	Description
Catégorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricant	Infineon
Condit.	-
Td(off)	4.1us
Pd - Power Dissipation	11.5kW
Td(on)	360ns
Current - Collector(Ic)	1kA
Collector-Emitter Breakdown Voltage (Vces)	3.3kV
Reverse Transfer Capacitance (Cres)	4nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.85V@15V,1000A
Gate Charge(Qg)	28uC@1800V
Vce Saturation(VCE(sat))	2.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.6J
Turn-On Energy (Eon)	1.55J
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	190nF@25V
Output Capacitance(Coes)	-

Type	Description
Catégorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricant	Infineon
Condit.	-
Td(off)	4.1us
Pd - Power Dissipation	11.5kW
Td(on)	360ns
Current - Collector(Ic)	1kA
Collector-Emitter Breakdown Voltage (Vces)	3.3kV
Reverse Transfer Capacitance (Cres)	4nF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.85V@15V,1000A
Gate Charge(Qg)	28uC@1800V
Vce Saturation(VCE(sat))	2.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.6J
Turn-On Energy (Eon)	1.55J
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	190nF@25V
Output Capacitance(Coes)	-

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Qté	Prix unit.(Référence uniquement)	Montant total
1+	$ 2153.287	$ 2153.29
200+	$ 2016.0333	$ 403206.66
500+	$ 1945.1833	$ 972591.65
1,000+	$ 1910.1752	$ 1910175.20
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Tout

Type	Description
Catégorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricant	Infineon
Condit.	-
Td(off)	4.1us
Pd - Power Dissipation	11.5kW
Td(on)	360ns
Current - Collector(Ic)	1kA
Collector-Emitter Breakdown Voltage (Vces)	3.3kV
Reverse Transfer Capacitance (Cres)	4nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.85V@15V,1000A
Gate Charge(Qg)	28uC@1800V
Vce Saturation(VCE(sat))	2.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.6J
Turn-On Energy (Eon)	1.55J
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	190nF@25V
Output Capacitance(Coes)	-

Type	Description
Catégorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricant	Infineon
Condit.	-
Td(off)	4.1us
Pd - Power Dissipation	11.5kW
Td(on)	360ns
Current - Collector(Ic)	1kA
Collector-Emitter Breakdown Voltage (Vces)	3.3kV
Reverse Transfer Capacitance (Cres)	4nF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.85V@15V,1000A
Gate Charge(Qg)	28uC@1800V
Vce Saturation(VCE(sat))	2.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	1.6J
Turn-On Energy (Eon)	1.55J
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	190nF@25V
Output Capacitance(Coes)	-