Infineon 56DN06B02ELEMXPSA1
| Fabricante | |
| N.º de pieza fab. | 56DN06B02ELEMXPSA1 |
| Nº LCSC | C17494166 |
| Emb. | DO-200AB |
| Número de Cliente | |
| Atrib. clave | 600V 1 Independent 940mV@8000A 11.14kA DO-200AB Single Diodes RoHS |
| Hoja de Datos | Infineon 56DN06B02ELEMXPSA1 |
| Cumplimiento RoHS | 1 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Infineon | |
| Emb. | DO-200AB | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | -40℃~+180℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 940mV@8000A | |
| Reverse Leakage Current (Ir) | 60mA | |
| Current - Rectified | 11.14kA | |
| Non-Repetitive Peak Forward Surge Current | 81kA |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Infineon | |
| Emb. | DO-200AB | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | -40℃~+180℃ |
| Tipo | Descripción | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 940mV@8000A | |
| Reverse Leakage Current (Ir) | 60mA | |
| Current - Rectified | 11.14kA | |
| Non-Repetitive Peak Forward Surge Current | 81kA |
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 336.2449 | $ 336.24 |
| 200+ | $ 315.8003 | $ 63160.06 |
| 500+ | $ 305.2479 | $ 152623.95 |
| 1,000+ | $ 300.0343 | $ 300034.30 |
Encapsulado Estándar20/Full Tray | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Infineon | |
| Emb. | DO-200AB | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | -40℃~+180℃ | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 940mV@8000A | |
| Reverse Leakage Current (Ir) | 60mA | |
| Current - Rectified | 11.14kA | |
| Non-Repetitive Peak Forward Surge Current | 81kA |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Infineon | |
| Emb. | DO-200AB | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | -40℃~+180℃ |
| Tipo | Descripción | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 940mV@8000A | |
| Reverse Leakage Current (Ir) | 60mA | |
| Current - Rectified | 11.14kA | |
| Non-Repetitive Peak Forward Surge Current | 81kA |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

