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Modelos EDAEasyEDA
onsemi NSBC143ZPDP6T5G
| Fabricante | |
| N.º de pieza fab. | NSBC143ZPDP6T5G |
| Nº LCSC | C896402 |
| Emb. | SOT-963 |
| Número de Cliente | |
| Atrib. clave | 80 339mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-963 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Hoja de Datos | onsemi NSBC143ZPDP6T5G |
| Cumplimiento RoHS | 4 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Fabricante | onsemi | |
| Emb. | SOT-963 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.14 | |
| Pd - Power Dissipation | 339mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Fabricante | onsemi | |
| Emb. | SOT-963 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Tipo | Descripción | |
|---|---|---|
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.14 | |
| Pd - Power Dissipation | 339mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Descripción
Traducción por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Características
Traducción por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.0647 | $ 0.06 |
| 200+ | $ 0.0251 | $ 5.02 |
| 500+ | $ 0.0242 | $ 12.10 |
| 1,000+ | $ 0.0238 | $ 23.80 |
Encapsulado Estándar8000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Fabricante | onsemi | |
| Emb. | SOT-963 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.14 | |
| Pd - Power Dissipation | 339mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Fabricante | onsemi | |
| Emb. | SOT-963 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Tipo | Descripción | |
|---|---|---|
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 0.14 | |
| Pd - Power Dissipation | 339mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Características
Traducción por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
C896402 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |