Infineon IRFPF50PBF
| Fabricante | |
| N.º de pieza fab. | IRFPF50PBF |
| Nº LCSC | C2934 |
| Emb. | TO-247AC |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 900V 6.7A TO-247AC |
| Hoja de Datos | Infineon IRFPF50PBF |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-247AC | |
| Output Capacitance(Coss) | 270pF | |
| Ciss-Input Capacitance | 2.9nF | |
| Pd - Power Dissipation | 190W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-247AC | |
| Output Capacitance(Coss) | 270pF | |
| Ciss-Input Capacitance | 2.9nF | |
| Pd - Power Dissipation | 190W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.7A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descripción
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
Características
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 4.1992 | $ 4.20 |
| 10+ | $ 3.6217 | $ 36.22 |
| 25+ | $ 3.2787 | $ 81.97 |
| 100+ | $ 2.9324 | $ 293.24 |
| 500+ | $ 2.7713 | $ 1385.65 |
| 1,000+ | $ 2.6995 | $ 2699.50 |
Encapsulado Estándar25/Full Tube | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-247AC | |
| Output Capacitance(Coss) | 270pF | |
| Ciss-Input Capacitance | 2.9nF | |
| Pd - Power Dissipation | 190W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-247AC | |
| Output Capacitance(Coss) | 270pF | |
| Ciss-Input Capacitance | 2.9nF | |
| Pd - Power Dissipation | 190W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.7A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descripción
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
Características
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
C2934 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| IRFPF50PBF | VISHAY | Similares | TO-247AC-3 | 10 | $ 5.2033 | ||
| IRFPG50PBF | VISHAY | Similares | TO-247AC | 303 | $ 2.8963 | ||
| MS9N150HJC0 | MASPOWER | Similares | TO-247 | 30 | $ 4.6606 | ||
| IRFPF50PBF-VB | VBsemi Elec | Similares | TO-247AC | 3 | $ 3.285 | ||
| VBP195R06 | VBsemi Elec | Similares | TO-247AC | 5 | $2.5297 $2.9761 |