onsemi NTK3134NT5G
| Fabricant | |
| Réf. Fab. | NTK3134NT5G |
| Réf. LCSC | C896490 |
| Condit. | SOT-723 |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 20V 750mA SOT-723 |
| Fiche Technique | onsemi NTK3134NT5G |
| Conformité RoHS | 4 documents disponibles |
| Pièces alternatives | 5 |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SOT-723 | |
| Output Capacitance(Coss) | 13pF | |
| Ciss-Input Capacitance | 120pF | |
| Pd - Power Dissipation | 310mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 750mA | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| RDS(on) | 350mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SOT-723 | |
| Output Capacitance(Coss) | 13pF | |
| Ciss-Input Capacitance | 120pF | |
| Pd - Power Dissipation | 310mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 750mA | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| RDS(on) | 350mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
Description
This N-channel enhancement mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caractéristiques
- N−Channel Switch with Low RDS(on)
- 44% Smaller Footprint and 38% Thinner than SC89
- Low Threshold Levels Allowing 1.5 V RDS(on) Rating
- Operated at Low Logic Level Gate Drive
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Load/Power Switching
- Interface Switching
- Logic Level Shift
- Battery Management for Ultra Small Portable Electronics
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 5+ | $ 0.0777 | $ 0.39 |
| 50+ | $ 0.0761 | $ 3.81 |
| 150+ | $ 0.0751 | $ 11.27 |
| 500+ | $ 0.0707 | $ 35.35 |
Boîtier Standard8000/Full Reel | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SOT-723 | |
| Output Capacitance(Coss) | 13pF | |
| Ciss-Input Capacitance | 120pF | |
| Pd - Power Dissipation | 310mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 750mA | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| RDS(on) | 350mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SOT-723 | |
| Output Capacitance(Coss) | 13pF | |
| Ciss-Input Capacitance | 120pF | |
| Pd - Power Dissipation | 310mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 750mA | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| RDS(on) | 350mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
Description
This N-channel enhancement mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caractéristiques
- N−Channel Switch with Low RDS(on)
- 44% Smaller Footprint and 38% Thinner than SC89
- Low Threshold Levels Allowing 1.5 V RDS(on) Rating
- Operated at Low Logic Level Gate Drive
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Load/Power Switching
- Interface Switching
- Logic Level Shift
- Battery Management for Ultra Small Portable Electronics
C896490 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Type alternatif | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|---|
| KM3134K | KUU | Similaires | SOT-723 | 9,100 | $ 0.0185 | ||
| CJ3134K KF | JSCJ | Similaires | SOT-723 | 3,040 | $ 0.0269 | ||
| NTK3134NT1G | onsemi | Similaires | SOT-723 | 1,610 | $ 0.227 | ||
| SI3134K-TP | MCC | Similaires | SOT-723 | 6,915 | $ 0.3772 | ||
| WNM2030-3/TR | WILLSEMI | Similaires | SOT-723 | 1,640 | $ 0.0498 |



