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WUXI UNIGROUP MICRO TPP65R170M
| Fabricante | WUXI UNIGROUP MICROAsian Brands |
| N.º de pieza fab. | TPP65R170M |
| Nº LCSC | C691633 |
| Emb. | TO-220 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 20A TO-220 |
| Hoja de Datos | WUXI UNIGROUP MICRO TPP65R170M |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 59pF | |
| Ciss-Input Capacitance | 1.676nF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 38.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 59pF | |
| Ciss-Input Capacitance | 1.676nF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 38.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
Características
Traducción por IA
- Ultra-low figure of merit R DS(on) x Qg
- 100% avalanche tested
- Easy to use/drive
- RoHS compliant
Aplicaciones
Traducción por IA
- Switching Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- Charger
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 8
8 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 1.4484 | $ 1.45 |
| 10+ | $ 1.1783 | $ 11.78 |
| 50+ | $ 1.029 | $ 51.45 |
| 100+ | $ 0.8615 | $ 86.15 |
| 500+ | $ 0.7861 | $ 393.05 |
| 1,000+ | $ 0.7529 | $ 752.90 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 59pF | |
| Ciss-Input Capacitance | 1.676nF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 38.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 59pF | |
| Ciss-Input Capacitance | 1.676nF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 38.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
Características
Traducción por IA
- Ultra-low figure of merit R DS(on) x Qg
- 100% avalanche tested
- Easy to use/drive
- RoHS compliant
Aplicaciones
Traducción por IA
- Switching Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- Charger
C691633 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| TPP65R160C | WUXI UNIGROUP MICRO | Similares | TO-220 | 0 | $ 2.3899 | ||
| TPP65R075DFD | WUXI UNIGROUP MICRO | Similares | TO-220 | 0 | $ 2.8138 | ||
| TPP80R250A | WUXI UNIGROUP MICRO | Similares | TO-220 | 0 | $ 2.4237 |