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JSCJ CJW1012
| Fabricante | JSCJAsian Brands |
| N.º de pieza fab. | CJW1012 |
| Nº LCSC | C504138 |
| Emb. | SOT-323 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 20V 500mA SOT-323 |
| Hoja de Datos | JSCJ CJW1012 |
| Piezas alternativas | 4 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | JSCJ | |
| Emb. | SOT-323 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 275mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 700mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 100pF | |
| Gate Charge(Qg) | 750pC@4.5V | |
| Vgs | ±12V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | JSCJ | |
| Emb. | SOT-323 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 275mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 700mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 100pF | |
| Gate Charge(Qg) | 750pC@4.5V | |
| Vgs | ±12V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).
Características
Traducción por IA
- High-Side Switching
- Low On-Resistance
- Low Threshold
- Fast Switching Speed
- ESD protected
Aplicaciones
Traducción por IA
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching
- Cell Phones, Pagers
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 2,610
2,610 En stock, envío inmediato
Mínimo: 10Múltiplo: 10Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 10+ | $ 0.0537 | $ 0.54 |
| 100+ | $ 0.045 | $ 4.50 |
| 300+ | $ 0.0407 | $ 12.21 |
| 3,000+ | $ 0.0375 | $ 112.50 |
| 6,000+ | $ 0.0349 | $ 209.40 |
| 9,000+ | $ 0.0336 | $ 302.40 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | JSCJ | |
| Emb. | SOT-323 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 275mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 700mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 100pF | |
| Gate Charge(Qg) | 750pC@4.5V | |
| Vgs | ±12V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | JSCJ | |
| Emb. | SOT-323 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 275mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 500mA |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 700mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 100pF | |
| Gate Charge(Qg) | 750pC@4.5V | |
| Vgs | ±12V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).
Características
Traducción por IA
- High-Side Switching
- Low On-Resistance
- Low Threshold
- Fast Switching Speed
- ESD protected
Aplicaciones
Traducción por IA
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching
- Cell Phones, Pagers
C504138 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| CJ3134KW-HAF | JSCJ | Similares | SOT-323-3 | 670 | $ 0.0431 | ||
| CJ3134KW | JSCJ | Similares | SOT-323 | 13,000 | $ 0.0346 | ||
| CJ2102A | JSCJ | Similares | SOT-323 | 12,110 | $ 0.0652 | ||
| CJ3144KW | JSCJ | Similares | SOT-323 | 0 | $ 0.0538 |
4 más piezas alternativas.Ver todos los sustitutos