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Modelos EDAEasyEDA
Nexperia BUK7K89-100EX
| Fabricante | |
| N.º de pieza fab. | BUK7K89-100EX |
| Nº LCSC | C549880 |
| Emb. | SOT-1205 |
| Número de Cliente | |
| Atrib. clave | 100V 13A 82.5mΩ@10V 38W 2 N-Channel SOT-1205 FET, MOSFET Arrays RoHS |
| Hoja de Datos | Nexperia BUK7K89-100EX |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 4 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | SOT-1205 | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Ciss-Input Capacitance | 811pF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 74pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 13A | |
| RDS(on) | 82.5mΩ@10V | |
| Pd - Power Dissipation | 38W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 13.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | SOT-1205 | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Ciss-Input Capacitance | 811pF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 74pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 13A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 82.5mΩ@10V | |
| Pd - Power Dissipation | 38W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 13.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Dual standard-level N-channel MOSFET in LFPAK56D (Double Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for high-performance automotive applications.
Características
Traducción por IA
- Dual MOSFET
- Q101 compliant
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard-level gate with VGS(th) > 1 V rated at 175°C
Aplicaciones
Traducción por IA
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 1
1 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 1.004 | $ 1.00 |
| 10+ | $ 0.8304 | $ 8.30 |
| 30+ | $ 0.7436 | $ 22.31 |
| 100+ | $ 0.6584 | $ 65.84 |
| 500+ | $ 0.6076 | $ 303.80 |
| 1,500+ | $ 0.5798 | $ 869.70 |
Encapsulado Estándar1500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | SOT-1205 | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Ciss-Input Capacitance | 811pF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 74pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 13A | |
| RDS(on) | 82.5mΩ@10V | |
| Pd - Power Dissipation | 38W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 13.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | SOT-1205 | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Ciss-Input Capacitance | 811pF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 74pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 13A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 82.5mΩ@10V | |
| Pd - Power Dissipation | 38W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 13.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Dual standard-level N-channel MOSFET in LFPAK56D (Double Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for high-performance automotive applications.
Características
Traducción por IA
- Dual MOSFET
- Q101 compliant
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard-level gate with VGS(th) > 1 V rated at 175°C
Aplicaciones
Traducción por IA
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
C549880 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| BUK9K32-100EX | Nexperia | Similares | SOT-1205 | 100 | $ 2.2031 | ||
| BUK7K29-100EX | Nexperia | Similares | SOT-1205 | 260 | $ 2.5462 | ||
| BUK9K89-100E,115 | Nexperia | Similares | SOT1205 | 0 | $ 1.3409 | ||
| BUK7K32-100EX | Nexperia | Similares | SOT1205 | 0 | $ 1.414 |