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Taiwan Semiconductor TSM038N04LCP
| Fabricant | Taiwan SemiconductorAsian Brands |
| Réf. Fab. | TSM038N04LCP |
| Réf. LCSC | C19856022 |
| Condit. | TO-252(DPAK) |
| Numéro Client | |
| Caract. clés | 135A 2.5V 125W 5mΩ@4.5V N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS |
| Fiche Technique | Taiwan Semiconductor TSM038N04LCP |
| Conformité RoHS | 2 documents disponibles |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Taiwan Semiconductor | |
| Condit. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 548pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 332pF | |
| RDS(on) | 5mΩ@4.5V | |
| Input Capacitance(Ciss) | 5.509nF | |
| Gate Charge(Qg) | 104nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Taiwan Semiconductor | |
| Condit. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 548pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 332pF | |
| RDS(on) | 5mΩ@4.5V | |
| Input Capacitance(Ciss) | 5.509nF | |
| Gate Charge(Qg) | 104nC@10V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(on)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caractéristiques
Traduction par IA
- Low on-resistance R DS(ON) to minimize conduction losses
- Logic level
- Low gate charge for fast power switching
- 100% tested for unclamped inductive switching (UIS) and Rg
- RoHS compliant per EU Directive 2011/65/EU and WEEE Directive 2002/96/EC
- Halogen-free per IEC 61249-2-21
Applications
Traduction par IA
- Brushless DC (BLDC) motor control
- Battery power management
- DC-DC converter
- Secondary synchronous rectification
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 3.8425 | $ 3.84 |
| 200+ | $ 1.5334 | $ 306.68 |
| 500+ | $ 1.4832 | $ 741.60 |
| 1,000+ | $ 1.4573 | $ 1457.30 |
Boîtier Standard5000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Taiwan Semiconductor | |
| Condit. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 548pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 332pF | |
| RDS(on) | 5mΩ@4.5V | |
| Input Capacitance(Ciss) | 5.509nF | |
| Gate Charge(Qg) | 104nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Taiwan Semiconductor | |
| Condit. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 548pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 332pF | |
| RDS(on) | 5mΩ@4.5V | |
| Input Capacitance(Ciss) | 5.509nF | |
| Gate Charge(Qg) | 104nC@10V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(on)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caractéristiques
Traduction par IA
- Low on-resistance R DS(ON) to minimize conduction losses
- Logic level
- Low gate charge for fast power switching
- 100% tested for unclamped inductive switching (UIS) and Rg
- RoHS compliant per EU Directive 2011/65/EU and WEEE Directive 2002/96/EC
- Halogen-free per IEC 61249-2-21
Applications
Traduction par IA
- Brushless DC (BLDC) motor control
- Battery power management
- DC-DC converter
- Secondary synchronous rectification
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |