- 핀아웃
- 풋프린트
onsemi FCP400N80Z
| 제조업체 | |
| 제조사 품번 | FCP400N80Z |
| LCSC 번호 | C898524 |
| 포장 | TO-220 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 800V 14A TO-220 |
| 데이터시트 | onsemi FCP400N80Z |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 2.35nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 2.35nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
개요
SuperFET II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
주요 특징
- Typ. RDS(on)=340 mΩ
- Ultra Low Gate Charge (Typ. Qg=43 nC)
- Low Eoss (Typ. 4.1 uJ @ 400 V)
- Low Effective Output Capacitance (Typ. Coss(eff.)=138 pF)
- 100% Avalanche Tested
- RoHS Compliant
- ESD Improved Capability
응용 분야
- AC-DC Power Supply
- LED Lighting
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 3.6116 | $ 3.61 |
| 10+ | $ 3.5564 | $ 35.56 |
| 30+ | $ 3.5206 | $ 105.62 |
| 100+ | $ 3.4849 | $ 348.49 |
표준 패키지800/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 2.35nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 2.35nF | |
| Pd - Power Dissipation | 195W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
개요
SuperFET II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
주요 특징
- Typ. RDS(on)=340 mΩ
- Ultra Low Gate Charge (Typ. Qg=43 nC)
- Low Eoss (Typ. 4.1 uJ @ 400 V)
- Low Effective Output Capacitance (Typ. Coss(eff.)=138 pF)
- 100% Avalanche Tested
- RoHS Compliant
- ESD Improved Capability
응용 분야
- AC-DC Power Supply
- LED Lighting
C898524 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| VBM18R15S | VBsemi Elec | 유사 제품 | TO-220AB | 5 | $3.4855 $4.1005 | ||
| MS20N85ICT0 | MASPOWER | 유사 제품 | TO-220 | 50 | $ 1.9562 | ||
| SPP17N80C3XKSA1 | Infineon | 유사 제품 | TO-220-3 | 6 | $3.7575 $10.4374 | ||
| SPP17N80C3 | Infineon | 유사 제품 | TO-220 | 83 | $ 1.6061 | ||
| IPP90R340C3 | Infineon | 유사 제품 | TO-220 | 37 | $ 5.0246 |