Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi BD237G
| Producent | |
| Nr części prod. | BD237G |
| Nr LCSC | C898372 |
| Opak. | TO-225-3 |
| Numer Klienta | |
| Klucz. cechy | TRANS NPN 80V 2A TO-225-3 |
| Karta Katalogowa | onsemi BD237G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-225-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-225-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 80V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV |
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Opis
Tłumaczenie AI
Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Funkcje
Tłumaczenie AI
- High DC Current Gain
- Epoxy Meets UL 94 V0 @ 0.125 in
- These Devices are Pb −Free and are RoHS Compliant
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.9001 | $ 0.90 |
| 10+ | $ 0.8871 | $ 8.87 |
| 30+ | $ 0.8773 | $ 26.32 |
| 100+ | $ 0.8692 | $ 86.92 |
Standardowa Obudowa500/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-225-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-225-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 80V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 40 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Funkcje
Tłumaczenie AI
- High DC Current Gain
- Epoxy Meets UL 94 V0 @ 0.125 in
- These Devices are Pb −Free and are RoHS Compliant
C898372 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |