Imagens ilustrativas
Modelos EDAEasyEDA
onsemi MUN5230T1G
| Fabricante | |
| Cód. da peça | MUN5230T1G |
| Nº LCSC | C891828 |
| Emb. | SC-70-3 |
| Número do Cliente | |
| Atrib. princ. | 50V 3 100mA 202mW NPN 1 NPN (Pre-Biased) SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Folha de Dados | onsemi MUN5230T1G |
| Conformidade RoHS | 4 documentos disponíveis |
| Peças alternativas | 5 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@0.1mA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrição | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@0.1mA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Recursos
Tradução por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Fora de estoque
Avise-me
Mínimo: 1Múltiplo: 1Unidade de venda: Piece
Adicionar à Lista BOM
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 0.0659 | $ 0.07 |
| 200+ | $ 0.0255 | $ 5.10 |
| 500+ | $ 0.0246 | $ 12.30 |
| 1,000+ | $ 0.0242 | $ 24.20 |
Encapsulamento Padrão3000/Full Reel | ||
Melhor preço para maior quantidade?
$
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@0.1mA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricante | onsemi | |
| Emb. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrição | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@0.1mA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Recursos
Tradução por IA
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C891828 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Peças alternativas
| MPN | Fabricante | Tipo alternativo | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|---|
| PDTC124XU,115 | Nexperia | Similares | SOT-323 | 5 | $ 0.3485 | ||
| DDTC114EUA-7-F | DIODES | Similares | SOT-323 | 1,635 | $ 0.3115 | ||
| RN1301,LF | TOSHIBA | Similares | SOT-323 | 3,040 | $ 0.0592 | ||
| DDTC115EUA-7-F | DIODES | Similares | SOT-323 | 110 | $ 0.0677 | ||
| PDTD123EUX | Nexperia | Similares | SOT-323-3 | 493 | $ 0.5533 |