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BL BL24C256A-NTRC

Producent
BLAsian Brands
Nr części prod.
BL24C256A-NTRC
Nr LCSC
C691875
Opak.
UDFN-8L-EP(2x3)
Numer Klienta
Klucz. cechy
I²C EEPROM
Karta KatalogowaBL BL24C256A-NTRC
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 24,640
24,640 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.Suma całkowita
5+$ 0.1909$ 0.95
50+$ 0.1537$ 7.69
150+$ 0.1377$ 20.66
500+$ 0.1178$ 58.90
3,000+$ 0.1052$ 315.60
6,000+$ 0.0999$ 599.40
Standardowa Obudowa3000/Full Reel
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Memory/Memory
ProducentBL
Opak.UDFN-8L-EP(2x3)
Operating Temperature-40℃~+85℃
FeaturesHardware write protection function;Noise suppression function
Memory Size256Kbit
Voltage - Supply1.7V~5.5V;0.5mA
Clock Frequency1MHz
Access Time0.45us
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)3ms
Standby Supply Current0.5uA
Write Cycle Endurance1,000,000 cycles
InterfaceI2C

Opis

Tłumaczenie AI

The BL24C256A provides 262144 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 32768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The BL24C256A offers an additional page, named the Identification Page (64 bytes). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.

Funkcje

Tłumaczenie AI
  • Compatible with all I²C bidirectional data transfer protocol
  • Memory array: 256 Kbits (32 Kbytes) of EEPROM
  • Page size: 64 bytes
  • Additional Write lockable page
  • Single supply voltage and high speed: 1 MHz
  • Random and sequential Read modes
  • Write: Byte Write within 3 ms – Page Write within 3 ms
  • Partial Page Writes Allowed
  • Write Protect Pin for Hardware Data Protection
  • Schmitt Trigger, Filtered Inputs for Noise Suppression
  • High-reliability Endurance: 1 Million Write Cycles
  • Data Retention: 100 Years
  • Enhanced ESD/Latch-up protection: HBM 8000V
  • 8-lead PDIP/SOP/TSSOP/UDFN/TSOT23-5 packages