MICROCHIP SST25VF080B-50-4I-QAE
| Fabricante | |
| N.º de pieza fab. | SST25VF080B-50-4I-QAE |
| Nº LCSC | C637020 |
| Emb. | WSON-8-EP(5x6) |
| Número de Cliente | |
| Atrib. clave | 8Mbit 2.7V~3.6V 66MHz SPI WSON-8-EP(5x6) Memory |
| Hoja de Datos | MICROCHIP SST25VF080B-50-4I-QAE |
| Piezas alternativas | 5 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | MICROCHIP | |
| Emb. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | 100 years | |
| Block Erase Time(tBE) | 25ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 5uA | |
| Interface | SPI |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | MICROCHIP | |
| Emb. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | 100 years | |
| Block Erase Time(tBE) | 25ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 5uA | |
| Interface | SPI |
Descripción
25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (program or erase) with a single power supply of 2.7V - 3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash memory technologies.
Características
- Single Voltage Read and Write Operations - 2.7V - 3.6V
- Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3
- High-Speed Clock Frequency: - Up to 66 MHz
- Superior Reliability: - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
- Low-Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 μA (typical)
- Flexible Erase Capability: - Uniform 4-Kbyte sectors - Uniform 32-Kbyte overlay blocks - Uniform 64-Kbyte overlay blocks
- Fast Erase and Byte Program: - Chip Erase Time: 35 ms (typical) - Sector/Block Erase Time: 18 ms (typical) - Byte Program Time: 7 μs (typical)
- Auto Address Increment (AAI) Programming: - Decrease total chip programming time over Byte Program operations
- End of Write Detection: - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode
- Hold Pin (HOLD#): - Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#): - Enables/Disables the Lock-Down function o the STATUS register
- Software Write Protection: - Write protection through Block Protection bits in STATUS register
- Temperature Range: - Commercial: 0℃ to +70℃ - Industrial: -40℃ to +85℃
- All devices are RoHS compliant
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | MICROCHIP | |
| Emb. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | 100 years | |
| Block Erase Time(tBE) | 25ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 5uA | |
| Interface | SPI |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | MICROCHIP | |
| Emb. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | 100 years | |
| Block Erase Time(tBE) | 25ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 5uA | |
| Interface | SPI |
Descripción
25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (program or erase) with a single power supply of 2.7V - 3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash memory technologies.
Características
- Single Voltage Read and Write Operations - 2.7V - 3.6V
- Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3
- High-Speed Clock Frequency: - Up to 66 MHz
- Superior Reliability: - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
- Low-Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 μA (typical)
- Flexible Erase Capability: - Uniform 4-Kbyte sectors - Uniform 32-Kbyte overlay blocks - Uniform 64-Kbyte overlay blocks
- Fast Erase and Byte Program: - Chip Erase Time: 35 ms (typical) - Sector/Block Erase Time: 18 ms (typical) - Byte Program Time: 7 μs (typical)
- Auto Address Increment (AAI) Programming: - Decrease total chip programming time over Byte Program operations
- End of Write Detection: - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode
- Hold Pin (HOLD#): - Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#): - Enables/Disables the Lock-Down function o the STATUS register
- Software Write Protection: - Write protection through Block Protection bits in STATUS register
- Temperature Range: - Commercial: 0℃ to +70℃ - Industrial: -40℃ to +85℃
- All devices are RoHS compliant
C637020 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |