- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi NSVT65010MW6T1G
| Producent | |
| Nr części prod. | NSVT65010MW6T1G |
| Nr LCSC | C604388 |
| Opak. | SOT-363 |
| Numer Klienta | |
| Klucz. cechy | TRANS PNP 65V 100mA SOT-363 |
| Karta Katalogowa | onsemi NSVT65010MW6T1G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Producent | onsemi | |
| Opak. | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Producent | onsemi | |
| Opak. | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Complementary NPN equivalent NST65011MW6T1G is available.
Funkcje
Tłumaczenie AI
- Current Gain Matching to 10%
- Base−Emitter Voltage Matched to ≤2 mV
- Drop−In Replacement for Standard Device
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
Zastosowania
Tłumaczenie AI
- Current Mirrors
- Differential, Sense and Balanced Amplifiers
- Mixers
- Detectors and Limiters
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 30
30 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5032 | $ 0.50 |
| 10+ | $ 0.4007 | $ 4.01 |
| 30+ | $ 0.3558 | $ 10.67 |
| 100+ | $ 0.3013 | $ 30.13 |
| 500+ | $ 0.2773 | $ 138.65 |
| 1,000+ | $ 0.2628 | $ 262.80 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Producent | onsemi | |
| Opak. | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW | |
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Producent | onsemi | |
| Opak. | SOT-363 | |
| Current - Collector Cutoff | 15nA | |
| DC Current Gain | 150 | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 380mW |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Transition frequency(fT) | 100MHz | |
| Vce Saturation(VCE(sat)) | 300mV | |
| type | PNP | |
| Number | 2 PNP | |
| Current - Collector(Ic) | 100mA | |
| Operating Temperature | -55℃~+150℃ |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Complementary NPN equivalent NST65011MW6T1G is available.
Funkcje
Tłumaczenie AI
- Current Gain Matching to 10%
- Base−Emitter Voltage Matched to ≤2 mV
- Drop−In Replacement for Standard Device
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
Zastosowania
Tłumaczenie AI
- Current Mirrors
- Differential, Sense and Balanced Amplifiers
- Mixers
- Detectors and Limiters
C604388 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NST65010MW6T1G | onsemi | Podobne | SOT-363 | 110 | $ 0.3071 | ||
| SBC856BDW1T1G | onsemi | Podobne | SOT-363 | 20 | $ 0.1044 | ||
| LBC856BDW1T1G | LRC | Podobne | SOT-363(SC-88) | 3,100 | $ 0.0292 | ||
| BC856S(RANGE:110-475) | JSCJ | Podobne | SOT-363 | 190 | $ 0.041 | ||
| AD-BC856S | JSCJ | Podobne | SOT-363 | 600 | $ 0.0536 |