Infineon IPS80R1K2P7
| Fabricante | |
| Cód. da peça | IPS80R1K2P7 |
| Nº LCSC | C537290 |
| Emb. | TO-251-3 |
| Número do Cliente | |
| Atrib. princ. | 37W 800V 4.5A 1.2Ω@10V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs RoHS |
| Folha de Dados | Infineon IPS80R1K2P7 |
| Conformidade RoHS | 1 documentos disponíveis |
| Peças alternativas | 5 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-251-3 | |
| Output Capacitance(Coss) | 6pF | |
| Ciss-Input Capacitance | 300pF | |
| Pd - Power Dissipation | 37W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-251-3 | |
| Output Capacitance(Coss) | 6pF | |
| Ciss-Input Capacitance | 300pF | |
| Pd - Power Dissipation | 37W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Descrição
Tradução por IA
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V superjunction technology, combining best-in-class performance with advanced ease of use, backed by Infineon's over 18 years of pioneering experience in superjunction technology innovation.
Recursos
Tradução por IA
- Best-in-class figure of merit RDS(on) * Eoss; reduced Qg, Ciss and Coss
- Best-in-class DPAK RDS(on)
- Best-in-class 3V V(GS)th with minimal ±0.5V V(GS)th variation
- Integrated Zener diode ESD protection
- Fully compliant with JEDEC industrial application standards
- Comprehensively optimized product portfolio
Aplicações
Tradução por IA
- Hard-switching and soft-switching flyback topologies for LED lighting
- Low-power chargers and adapters
- Audio
- Auxiliary power supplies
- Industrial power supplies
- PFC stage in consumer applications
- Solar
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-251-3 | |
| Output Capacitance(Coss) | 6pF | |
| Ciss-Input Capacitance | 300pF | |
| Pd - Power Dissipation | 37W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-251-3 | |
| Output Capacitance(Coss) | 6pF | |
| Ciss-Input Capacitance | 300pF | |
| Pd - Power Dissipation | 37W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V superjunction technology, combining best-in-class performance with advanced ease of use, backed by Infineon's over 18 years of pioneering experience in superjunction technology innovation.
Recursos
Tradução por IA
- Best-in-class figure of merit RDS(on) * Eoss; reduced Qg, Ciss and Coss
- Best-in-class DPAK RDS(on)
- Best-in-class 3V V(GS)th with minimal ±0.5V V(GS)th variation
- Integrated Zener diode ESD protection
- Fully compliant with JEDEC industrial application standards
- Comprehensively optimized product portfolio
Aplicações
Tradução por IA
- Hard-switching and soft-switching flyback topologies for LED lighting
- Low-power chargers and adapters
- Audio
- Auxiliary power supplies
- Industrial power supplies
- PFC stage in consumer applications
- Solar
C537290 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

