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Modelos EDAEasyEDA
PAKER SI2312
| Fabricante | PAKERAsian Brands |
| N.º de pieza fab. | SI2312 |
| Nº LCSC | C5278891 |
| Emb. | SOT-23 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 20V 6A SOT-23 |
| Hoja de Datos | PAKER SI2312 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 2 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | PAKER | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 885pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±10V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | PAKER | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 885pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±10V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Advanced trench process technology
- High density cell design for Ultra Low On-Resistance
- Halogen free and RoHS compliant
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | PAKER | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 885pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±10V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | PAKER | |
| Emb. | SOT-23 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 885pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 120pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±10V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Advanced trench process technology
- High density cell design for Ultra Low On-Resistance
- Halogen free and RoHS compliant
C5278891 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |