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EDA-ModelleEasyEDA
ST STP40N65M2
| Hersteller | |
| Herst.-Teilenr. | STP40N65M2 |
| LCSC-Nr. | C501037 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 250W 650V 32A 99mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS |
| Datenblatt | ST STP40N65M2 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 102pF | |
| Ciss-Input Capacitance | 2.355nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Reverse Transfer Capacitance (Crss) | 2.7pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 102pF | |
| Ciss-Input Capacitance | 2.355nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 32A | |
| Reverse Transfer Capacitance (Crss) | 2.7pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener-protected
Anwendungen
KI-Übersetzung
- Switching applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.6879 | $ 3.69 |
| 10+ | $ 3.6392 | $ 36.39 |
| 50+ | $ 3.6067 | $ 180.34 |
| 100+ | $ 3.5742 | $ 357.42 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 102pF | |
| Ciss-Input Capacitance | 2.355nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 32A | |
| Reverse Transfer Capacitance (Crss) | 2.7pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 102pF | |
| Ciss-Input Capacitance | 2.355nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 32A | |
| Reverse Transfer Capacitance (Crss) | 2.7pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener-protected
Anwendungen
KI-Übersetzung
- Switching applications
C501037 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| STP43N60DM2 | ST | Ähnliche | TO-220 | 6 | $ 2.877 | ||
| STP42N60M2-EP | ST | Ähnliche | TO-220 | 10 | $ 7.9542 | ||
| STP45N60DM2AG | ST | Ähnliche | TO-220-3 | 70 | $ 9.8754 | ||
| STP40N60M2 | ST | Ähnliche | TO-220 | 1 | $ 9.3675 | ||
| CRJT99N65G2 | CRMICRO | Ähnliche | TO-220 | 275 | $ 1.8088 |