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EDA-ModelleEasyEDA
onsemi FOD819
| Hersteller | |
| Herst.-Teilenr. | FOD819 |
| LCSC-Nr. | C479729 |
| Verp. | DIP-4 |
| Kundennummer | |
| Hauptmerkm. | 4-Pin DIP High Speed Phototransistor Optocouplers |
| Datenblatt | onsemi FOD819 |
| RoHS-Konformität | 4 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Hersteller | onsemi | |
| Verp. | DIP-4 | |
| Output Current | 30mA | |
| Fall time | 20us | |
| Rise time | 12us | |
| Vce Saturation(VCE(sat)) | 300mV@1.5mA,0.2mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 600%;100% | |
| Voltage - Forward(Vf) | 1.2V | |
| Forward Current(If) | 50mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Hersteller | onsemi | |
| Verp. | DIP-4 | |
| Output Current | 30mA | |
| Fall time | 20us | |
| Rise time | 12us | |
| Vce Saturation(VCE(sat)) | 300mV@1.5mA,0.2mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V |
| Typ | Beschreibung | |
|---|---|---|
| Current transfer ratio | 600%;100% | |
| Voltage - Forward(Vf) | 1.2V | |
| Forward Current(If) | 50mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The FOD819 consists of a gallium arsenide (GaAs) infra− red emitting diode, driving a high speed photo detector with integrated base−to−emitter resistor, R_BE, in a 4−pin dual−in−line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
Merkmale
KI-Übersetzung
- High Speed Performance ~30 kHz
- Current Transfer Ratio: 100% to 600%
- Minimum BVCEO of 80 V Guaranteed
- Safety and Regulatory Approvals:
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Anwendungen
KI-Übersetzung
- Digital Logic Inputs
- Microprocessor Inputs
- Power Supply Monitor
- Twisted Pair Line Receiver
- Telephone Line Receiver
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 4
4 Ab Lager, sofort versandfertig
Eingestellt
Nach Abverkauf wird dieser Artikel als „Nicht verfügbar“ gekennzeichnet.
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6224 | $ 0.62 |
| 10+ | $ 0.6101 | $ 6.10 |
| 50+ | $ 0.6009 | $ 30.05 |
| 100+ | $ 0.5917 | $ 59.17 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Hersteller | onsemi | |
| Verp. | DIP-4 | |
| Output Current | 30mA | |
| Fall time | 20us | |
| Rise time | 12us | |
| Vce Saturation(VCE(sat)) | 300mV@1.5mA,0.2mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 600%;100% | |
| Voltage - Forward(Vf) | 1.2V | |
| Forward Current(If) | 50mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Hersteller | onsemi | |
| Verp. | DIP-4 | |
| Output Current | 30mA | |
| Fall time | 20us | |
| Rise time | 12us | |
| Vce Saturation(VCE(sat)) | 300mV@1.5mA,0.2mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V |
| Typ | Beschreibung | |
|---|---|---|
| Current transfer ratio | 600%;100% | |
| Voltage - Forward(Vf) | 1.2V | |
| Forward Current(If) | 50mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 200mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 5kV | |
| Features | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The FOD819 consists of a gallium arsenide (GaAs) infra− red emitting diode, driving a high speed photo detector with integrated base−to−emitter resistor, R_BE, in a 4−pin dual−in−line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
Merkmale
KI-Übersetzung
- High Speed Performance ~30 kHz
- Current Transfer Ratio: 100% to 600%
- Minimum BVCEO of 80 V Guaranteed
- Safety and Regulatory Approvals:
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Anwendungen
KI-Übersetzung
- Digital Logic Inputs
- Microprocessor Inputs
- Power Supply Monitor
- Twisted Pair Line Receiver
- Telephone Line Receiver
C479729 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Typ | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |