DIODES DMTH4008LPS-13
| Produttore | |
| Cod. Prod. | DMTH4008LPS-13 |
| Cod. LCSC | C461120 |
| Imballo | PowerDI5060-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 40V 64.8A PowerDI5060-8 |
| Scheda Tecnica | DIODES DMTH4008LPS-13 |
| Conformità RoHS | 5 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 322pF | |
| Current - Continuous Drain(Id) | 64.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 56.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 7.3mΩ@10V;10mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.088nF | |
| Gate Charge(Qg) | 7.4nC@4.5V;15.3nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 322pF | |
| Current - Continuous Drain(Id) | 64.8A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 56.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 7.3mΩ@10V;10mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.088nF | |
| Gate Charge(Qg) | 7.4nC@4.5V;15.3nC@10V |
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Descrizione
Traduzione AI
This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated temperature up to +175℃, suitable for high ambient temperature environments
- 100% unclamped inductive switching tested in production, ensuring greater reliability and durability in end applications
- Low RDS(ON) to minimize conduction losses
- Low input capacitance
- Fast switching speed
- Lead-free finish, RoHS compliant
- Halogen- and antimony-free, "green" device
- Device complies with JEDEC standards (as referenced in AEC-Q) for high reliability
- Automotive-grade product covered in a separate datasheet (DMTH4008LPSQ)
Applicazioni
Traduzione AI
- Brushless DC (BLDC) motors
- DC-DC converters
- Load switches
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Disponibile: 2,554
2,554 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9342 | $ 0.93 |
| 10+ | $ 0.7703 | $ 7.70 |
| 30+ | $ 0.69 | $ 20.70 |
| 100+ | $ 0.608 | $ 60.80 |
| 500+ | $ 0.5605 | $ 280.25 |
| 1,000+ | $ 0.5359 | $ 535.90 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 322pF | |
| Current - Continuous Drain(Id) | 64.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 56.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 7.3mΩ@10V;10mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.088nF | |
| Gate Charge(Qg) | 7.4nC@4.5V;15.3nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 322pF | |
| Current - Continuous Drain(Id) | 64.8A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 56.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 7.3mΩ@10V;10mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.088nF | |
| Gate Charge(Qg) | 7.4nC@4.5V;15.3nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Rated temperature up to +175℃, suitable for high ambient temperature environments
- 100% unclamped inductive switching tested in production, ensuring greater reliability and durability in end applications
- Low RDS(ON) to minimize conduction losses
- Low input capacitance
- Fast switching speed
- Lead-free finish, RoHS compliant
- Halogen- and antimony-free, "green" device
- Device complies with JEDEC standards (as referenced in AEC-Q) for high reliability
- Automotive-grade product covered in a separate datasheet (DMTH4008LPSQ)
Applicazioni
Traduzione AI
- Brushless DC (BLDC) motors
- DC-DC converters
- Load switches
C461120 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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