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Abbildung ähnlich
EDA-ModelleEasyEDA
DIODES DMN3730U-7
| Hersteller | |
| Herst.-Teilenr. | DMN3730U-7 |
| LCSC-Nr. | C459540 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 940mA SOT-23 |
| Datenblatt | DIODES DMN3730U-7 |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.1pF | |
| Current - Continuous Drain(Id) | 940mA | |
| Ciss-Input Capacitance | 64.3pF | |
| Pd - Power Dissipation | 710mW | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 460mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.1pF | |
| Current - Continuous Drain(Id) | 940mA |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 64.3pF | |
| Pd - Power Dissipation | 710mW | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 460mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low VGS(TH), direct battery drive capable
- Low RDS(ON)
- Gate with 2kV ESD protection
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "Green" device
- JEDEC-compliant (as referenced in AEC-Q) with high reliability
Anwendungen
KI-Übersetzung
- Load switch
- Portable applications
- Power management functions
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 6,700
6,700 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0803 | $ 0.80 |
| 100+ | $ 0.0668 | $ 6.68 |
| 300+ | $ 0.0601 | $ 18.03 |
| 3,000+ | $ 0.0545 | $ 163.50 |
| 6,000+ | $ 0.0505 | $ 303.00 |
| 9,000+ | $ 0.0485 | $ 436.50 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.1pF | |
| Current - Continuous Drain(Id) | 940mA | |
| Ciss-Input Capacitance | 64.3pF | |
| Pd - Power Dissipation | 710mW | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 460mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.1pF | |
| Current - Continuous Drain(Id) | 940mA |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 64.3pF | |
| Pd - Power Dissipation | 710mW | |
| Reverse Transfer Capacitance (Crss) | 4.5pF | |
| RDS(on) | 460mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low VGS(TH), direct battery drive capable
- Low RDS(ON)
- Gate with 2kV ESD protection
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "Green" device
- JEDEC-compliant (as referenced in AEC-Q) with high reliability
Anwendungen
KI-Übersetzung
- Load switch
- Portable applications
- Power management functions
C459540 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| FDV303N-GK | GOODWORK | Ähnliche | SOT-23 | 2,040 | $0.0147 $0.0293 | ||
| HSS3132A | HUASHUO | Ähnliche | SOT-23 | 100 | $ 0.0181 | ||
| DMN4035L-7 | DIODES | Ähnliche | SOT-23 | 20 | $ 0.2572 | ||
| HSS3400E | HUASHUO | Ähnliche | SOT-23S | 80 | $ 0.0578 | ||
| BN3400J | BORN | Ähnliche | SOT-23 | 9,000 | $ 0.0329 |