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Infineon IPD65R650CE

Fabricante
Infineon
Cód. da peça
IPD65R650CE
Nº LCSC
C459168
Emb.
TO-252
Número do Cliente
Atrib. princ.
MOSFET 700V 10.1A TO-252
Folha de DadosInfineon IPD65R650CE
Conformidade RoHS1 documentos disponíveis
Peças alternativas5
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias

Especificações do Produto

Tudo
TipoDescrição
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
FabricanteInfineon
Emb.TO-252
Output Capacitance(Coss)30pF
Ciss-Input Capacitance440pF
Pd - Power Dissipation86W
Configuration-
Operating Temperature-40℃~+150℃
Drain to Source Voltage700V
Current - Continuous Drain(Id)10.1A
Reverse Transfer Capacitance (Crss)30pF
RDS(on)650mΩ@10V
Number1 N-channel
Gate Charge(Qg)23nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.5V
TypeN-Channel
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Descrição

Tradução por IA

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Recursos

Tradução por IA
  • Extremely low losses due to very low FOM Rdson*Qg and Eoss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Pb-free plating, Halogen free mold compound
  • Qualified for standard grade applications

Aplicações

Tradução por IA
  • PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.