Infineon F3L400R07ME4B22

Fabricante	Infineon
Cód. da peça	F3L400R07ME4B22
Nº LCSC	C3198630
Emb.	-
Número do Cliente
Atrib. princ.	1.15kW 450A 650V FS (Field Stop) Single IGBTs RoHS
Folha de Dados	Infineon F3L400R07ME4B22
Conformidade RoHS	1 documentos disponíveis

Especificações do Produto

Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	640ns
Pd - Power Dissipation	1.15kW
Td(on)	120ns
Current - Collector(Ic)	450A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	760pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.95V@15V,400A
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	1.55V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	20mJ
Turn-On Energy (Eon)	10mJ
Input Capacitance(Cies)	26nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	4.3uC@30V

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	640ns
Pd - Power Dissipation	1.15kW
Td(on)	120ns
Current - Collector(Ic)	450A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	760pF
IGBT Type	FS (Field Stop)

Tipo	Descrição
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.95V@15V,400A
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	1.55V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	20mJ
Turn-On Energy (Eon)	10mJ
Input Capacitance(Cies)	26nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	4.3uC@30V

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Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	640ns
Pd - Power Dissipation	1.15kW
Td(on)	120ns
Current - Collector(Ic)	450A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	760pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.95V@15V,400A
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	1.55V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	20mJ
Turn-On Energy (Eon)	10mJ
Input Capacitance(Cies)	26nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	4.3uC@30V

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Fabricante	Infineon
Emb.	-
Td(off)	640ns
Pd - Power Dissipation	1.15kW
Td(on)	120ns
Current - Collector(Ic)	450A
Collector-Emitter Breakdown Voltage (Vces)	650V
Reverse Transfer Capacitance (Cres)	760pF
IGBT Type	FS (Field Stop)

Tipo	Descrição
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.95V@15V,400A
Operating Temperature	-40℃~+150℃
Vce Saturation(VCE(sat))	1.55V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	20mJ
Turn-On Energy (Eon)	10mJ
Input Capacitance(Cies)	26nF@25V
Output Capacitance(Coes)	-
Gate Charge(Qg)	4.3uC@30V