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EDA-ModelleEasyEDA
VBsemi Elec VBE17R12S
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | VBE17R12S |
| LCSC-Nr. | C22357294 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 700V 12A TO-252 |
| Datenblatt | VBsemi Elec VBE17R12S |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.2nF | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.2985 | $ 2.30 |
| 10+ | $ 2.0346 | $ 20.35 |
| 30+ | $ 1.8701 | $ 56.10 |
| 100+ | $ 1.7007 | $ 170.07 |
| 500+ | $ 1.6241 | $ 812.05 |
| 1,000+ | $ 1.5915 | $ 1591.50 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.2nF | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| AOD360A70-VB | VBsemi Elec | Ähnliche | TO-252 | 3 | $1.4198 $1.6703 | ||
| IPD70R360P7S-VB | VBsemi Elec | Ähnliche | TO-252 | 10 | $1.4198 $1.6703 | ||
| VBE17R15S | VBsemi Elec | Ähnliche | TO-252 | 51 | $ 2.3258 | ||
| STD15N65M5-VB | VBsemi Elec | Ähnliche | TO-252 | 5 | $1.3472 $1.5849 | ||
| FCD260N65S3-VB | VBsemi Elec | Ähnliche | TO-252 | 2 | $ 1.9783 |