Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-123FL | |
| Reverse Recovery Time (trr) | 35ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.68V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-123FL | |
| Reverse Recovery Time (trr) | 35ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.68V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low-profile package
- Compatible with automated placement
- Glass-passivated chip junction
- Fast switching for high efficiency
- Ultra-fast recovery time for high efficiency
Aplicaciones
Traducción por IA
- Low-voltage high-frequency inverters
- Freewheeling
- DC/DC converters
- Polarity protection applications
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-123FL | |
| Reverse Recovery Time (trr) | 35ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.68V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | R+O | |
| Emb. | SOD-123FL | |
| Reverse Recovery Time (trr) | 35ns | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.68V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low-profile package
- Compatible with automated placement
- Glass-passivated chip junction
- Fast switching for high efficiency
- Ultra-fast recovery time for high efficiency
Aplicaciones
Traducción por IA
- Low-voltage high-frequency inverters
- Freewheeling
- DC/DC converters
- Polarity protection applications
C18199156 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



