Infineon IRF8721TRPBF
| Fabricante | |
| Cód. da peça | IRF8721TRPBF |
| Nº LCSC | C169760 |
| Emb. | SOIC-8 |
| Número do Cliente | |
| Atrib. princ. | 2.5W 30V 14A 8.5mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS |
| Folha de Dados | Infineon IRF8721TRPBF |
| Conformidade RoHS | 1 documentos disponíveis |
| Peças alternativas | 5 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Output Capacitance(Coss) | 229pF | |
| Ciss-Input Capacitance | 1.04nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 114pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Output Capacitance(Coss) | 229pF | |
| Ciss-Input Capacitance | 1.04nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 114pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Type | N-Channel |
Descrição
The IRF8721PbF incorporates the latest HEXFET power MOSFET silicon technology in the industry-standard SO-8 package. The IRF8721PbF is optimized for key parameters in synchronous buck operation, including on-resistance Rds(on) and gate charge, to reduce conduction losses and switching losses. The reduction in total losses makes this device ideal for high-efficiency DC-DC converters powering next-generation processors in notebook and network communication applications.
Recursos
- Ultra-low gate charge
- Low RDS(ON) at VGS = 4.5V
- Low gate impedance
- Fully characterized avalanche voltage and current
- Maximum gate rated voltage VGS = 20V
- Lead-free
Aplicações
- Control MOSFET for synchronous buck converters in notebook processor power supplies
- Control MOSFET for isolated DC-DC converters in network systems
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Output Capacitance(Coss) | 229pF | |
| Ciss-Input Capacitance | 1.04nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 114pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Output Capacitance(Coss) | 229pF | |
| Ciss-Input Capacitance | 1.04nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 114pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Type | N-Channel |
Descrição
The IRF8721PbF incorporates the latest HEXFET power MOSFET silicon technology in the industry-standard SO-8 package. The IRF8721PbF is optimized for key parameters in synchronous buck operation, including on-resistance Rds(on) and gate charge, to reduce conduction losses and switching losses. The reduction in total losses makes this device ideal for high-efficiency DC-DC converters powering next-generation processors in notebook and network communication applications.
Recursos
- Ultra-low gate charge
- Low RDS(ON) at VGS = 4.5V
- Low gate impedance
- Fully characterized avalanche voltage and current
- Maximum gate rated voltage VGS = 20V
- Lead-free
Aplicações
- Control MOSFET for synchronous buck converters in notebook processor power supplies
- Control MOSFET for isolated DC-DC converters in network systems
C169760 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



