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Wuxi China Resources Huajing Microelectronics CS4N60A7HD
| Fabricante | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| Cód. da peça | CS4N60A7HD |
| Nº LCSC | C162399 |
| Emb. | TO-126 |
| Número do Cliente | |
| Atrib. princ. | 30W 600V 4A 2.3Ω@10V 1 N-channel N-Channel TO-126 Single FETs, MOSFETs |
| Folha de Dados | Wuxi China Resources Huajing Microelectronics CS4N60A7HD |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-126 | |
| Output Capacitance(Coss) | 55pF | |
| Ciss-Input Capacitance | 544pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-126 | |
| Output Capacitance(Coss) | 55pF | |
| Ciss-Input Capacitance | 544pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Descrição
Tradução por IA
CS4N60 A7HD is a silicon N-channel enhancement-mode VDMOS FET fabricated using self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-126F package, RoHS compliant.
Recursos
Tradução por IA
- Fast switching
- Enhanced ESD capability
- Low gate charge (typical: 14.5 nC)
- Low reverse transfer capacitance (typical: 8.5 pF)
- 100% single pulse avalanche energy tested
Aplicações
Tradução por IA
- Power switching circuits for adapters and chargers.
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-126 | |
| Output Capacitance(Coss) | 55pF | |
| Ciss-Input Capacitance | 544pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-126 | |
| Output Capacitance(Coss) | 55pF | |
| Ciss-Input Capacitance | 544pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Tipo | Descrição | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| RDS(on) | 2.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
CS4N60 A7HD is a silicon N-channel enhancement-mode VDMOS FET fabricated using self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-126F package, RoHS compliant.
Recursos
Tradução por IA
- Fast switching
- Enhanced ESD capability
- Low gate charge (typical: 14.5 nC)
- Low reverse transfer capacitance (typical: 8.5 pF)
- 100% single pulse avalanche energy tested
Aplicações
Tradução por IA
- Power switching circuits for adapters and chargers.
C162399 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |