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EDA-ModelleEasyEDA
onsemi FDS86106
| Hersteller | |
| Herst.-Teilenr. | FDS86106 |
| LCSC-Nr. | C903638 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | 5W 100V 3.4A 4V 105mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FDS86106 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 47pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 47pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced Power Trench® process, optimized for on-resistance rDS(on), switching performance, and ruggedness.
Merkmale
KI-Übersetzung
- Maximum on-resistance rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
- Maximum on-resistance rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
- High-performance trench technology for ultra-low rDS(on)
- High power and high current handling capability in widely used SMT packages
- 100% tested for single-pulse avalanche energy (UIL)
- RoHS compliant
Anwendungen
KI-Übersetzung
- Synchronous rectifier
- Primary switch for bridge topology
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.498 | $ 1.50 |
| 10+ | $ 1.3176 | $ 13.18 |
| 30+ | $ 1.2185 | $ 36.56 |
| 100+ | $ 1.108 | $ 110.80 |
| 500+ | $ 0.9651 | $ 482.55 |
| 1,000+ | $ 0.9423 | $ 942.30 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 47pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 47pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced Power Trench® process, optimized for on-resistance rDS(on), switching performance, and ruggedness.
Merkmale
KI-Übersetzung
- Maximum on-resistance rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
- Maximum on-resistance rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
- High-performance trench technology for ultra-low rDS(on)
- High power and high current handling capability in widely used SMT packages
- 100% tested for single-pulse avalanche energy (UIL)
- RoHS compliant
Anwendungen
KI-Übersetzung
- Synchronous rectifier
- Primary switch for bridge topology
C903638 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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