MICROCHIP APT100F50J
| Hersteller | |
| Herst.-Teilenr. | APT100F50J |
| LCSC-Nr. | C5554118 |
| Verp. | SOT-227B-4 |
| Kundennummer | |
| Hauptmerkm. | 960W 500V 103A 36mΩ@10V 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS |
| Datenblatt | MICROCHIP APT100F50J |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.645nF | |
| Ciss-Input Capacitance | 24.6nF | |
| Pd - Power Dissipation | 960W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 103A | |
| Reverse Transfer Capacitance (Crss) | 330pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 620nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.645nF | |
| Ciss-Input Capacitance | 24.6nF | |
| Pd - Power Dissipation | 960W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 103A | |
| Reverse Transfer Capacitance (Crss) | 330pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 620nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Beschreibung
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. Featuring a proprietary planar stripe design for excellent reliability and manufacturability. Low switching losses are achieved through low input capacitance and ultra-low Crss "Miller" capacitance. The inherent gate resistance and capacitance of the polysilicon gate structure help control the slew rate during switching, enabling low EMI and reliable paralleling, even at very high switching frequencies. High avalanche energy capability enhances reliability in flyback, boost, forward, and other circuit topologies.
Merkmale
- Fast switching with low EMI
- Short reverse recovery time (trr) for high reliability
- Ultra-low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Anwendungen
- ZVS phase-shifted and other full-bridge circuits
- Half-bridge circuits
- PFC and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 170.2028 | $ 170.20 |
| 200+ | $ 67.9127 | $ 13582.54 |
| 500+ | $ 65.6427 | $ 32821.35 |
| 1,000+ | $ 64.5214 | $ 64521.40 |
Standardgehäuse1/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.645nF | |
| Ciss-Input Capacitance | 24.6nF | |
| Pd - Power Dissipation | 960W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 103A | |
| Reverse Transfer Capacitance (Crss) | 330pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 620nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.645nF | |
| Ciss-Input Capacitance | 24.6nF | |
| Pd - Power Dissipation | 960W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 103A | |
| Reverse Transfer Capacitance (Crss) | 330pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 620nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Beschreibung
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. Featuring a proprietary planar stripe design for excellent reliability and manufacturability. Low switching losses are achieved through low input capacitance and ultra-low Crss "Miller" capacitance. The inherent gate resistance and capacitance of the polysilicon gate structure help control the slew rate during switching, enabling low EMI and reliable paralleling, even at very high switching frequencies. High avalanche energy capability enhances reliability in flyback, boost, forward, and other circuit topologies.
Merkmale
- Fast switching with low EMI
- Short reverse recovery time (trr) for high reliability
- Ultra-low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Anwendungen
- ZVS phase-shifted and other full-bridge circuits
- Half-bridge circuits
- PFC and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| APT50M65JFLL | MICROCHIP | Ähnliche | SOT-227B-4 | 3 | $ 116.284 | ||
| MS170N65HGF4 | MASPOWER | Ähnliche | SOT-227 | 5 | $ 43.6597 | ||
| IXFN150N65X2 | Littelfuse/IXYS | Ähnliche | SOT-227B | 20 | $ 59.0347 | ||
| IXFN120N65X2 | Littelfuse/IXYS | Ähnliche | SOT-227 | 16 | $ 48.6906 | ||
| IXFN170N65X2 | Littelfuse/IXYS | Ähnliche | SOT-227 | 23 | $ 51.2178 |