DOINGTER NC008NDG

Fabricante	DOINGTERAsian Brands
Cód. da peça	NC008NDG
Nº LCSC	C55090556
Emb.	DFN-8(5x6)
Número do Cliente
Atrib. princ.	23W 30V 50A 6.4mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs
Folha de Dados	DOINGTER NC008NDG
Peças alternativas	5

Especificações do Produto

Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Fabricante	DOINGTER
Emb.	DFN-8(5x6)
Output Capacitance(Coss)	133pF
Ciss-Input Capacitance	900pF
Pd - Power Dissipation	23W
Configuration	-
Drain to Source Voltage	30V
Operating Temperature	-50℃~+150℃
Current - Continuous Drain(Id)	50A
Reverse Transfer Capacitance (Crss)	105pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	9.8nC@10V
Vgs	20V
Gate Threshold Voltage (Vgs(th))	1.46V
Type	N-Channel

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Fabricante	DOINGTER
Emb.	DFN-8(5x6)
Output Capacitance(Coss)	133pF
Ciss-Input Capacitance	900pF
Pd - Power Dissipation	23W
Configuration	-
Drain to Source Voltage	30V
Operating Temperature	-50℃~+150℃

Tipo	Descrição
Current - Continuous Drain(Id)	50A
Reverse Transfer Capacitance (Crss)	105pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	9.8nC@10V
Vgs	20V
Gate Threshold Voltage (Vgs(th))	1.46V
Type	N-Channel

Garantia em cada pedido

100% Autêntico · Devolução ou Substituição em 30 Dias

Tudo

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Fabricante	DOINGTER
Emb.	DFN-8(5x6)
Output Capacitance(Coss)	133pF
Ciss-Input Capacitance	900pF
Pd - Power Dissipation	23W
Configuration	-
Drain to Source Voltage	30V
Operating Temperature	-50℃~+150℃
Current - Continuous Drain(Id)	50A
Reverse Transfer Capacitance (Crss)	105pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	9.8nC@10V
Vgs	20V
Gate Threshold Voltage (Vgs(th))	1.46V
Type	N-Channel

Tipo	Descrição
Categoria	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Fabricante	DOINGTER
Emb.	DFN-8(5x6)
Output Capacitance(Coss)	133pF
Ciss-Input Capacitance	900pF
Pd - Power Dissipation	23W
Configuration	-
Drain to Source Voltage	30V
Operating Temperature	-50℃~+150℃

Tipo	Descrição
Current - Continuous Drain(Id)	50A
Reverse Transfer Capacitance (Crss)	105pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	9.8nC@10V
Vgs	20V
Gate Threshold Voltage (Vgs(th))	1.46V
Type	N-Channel