HGSEMI HG24C16M5-852/TR
| Fabricante | HGSEMIAsian Brands |
| Cód. da peça | HG24C16M5-852/TR |
| Nº LCSC | C54140479 |
| Emb. | SOT-23-5 |
| Número do Cliente | |
| Atrib. princ. | 16Kbit 1MHz I2C SOT-23-5 Memory |
| Folha de Dados | HGSEMI HG24C16M5-852/TR |
| Peças alternativas | 4 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | HGSEMI | |
| Emb. | SOT-23-5 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA | |
| Clock Frequency | 1MHz | |
| Access Time | 900ns | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | HGSEMI | |
| Emb. | SOT-23-5 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | 1MHz | |
| Access Time | 900ns | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
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Descrição
Tradução por IA
HG24C08/HG24C16 are I²C-compatible serial EEPROM devices. They feature an 8 Kbits (1 Kbytes) / 16 Kbits (2 Kbytes) memory array with 16-byte pages.
Recursos
Tradução por IA
- Single supply voltage and high-speed mode
- Minimum operating voltage down to 1.7V
- 400kHz/1MHz clock from 1.7V to 5.5V
- Low-power CMOS technology
- Read current 0.2mA (400kHz, typical)
- Write current 0.8mA (400kHz, typical)
- Schmitt trigger with filtered inputs for noise suppression
- Sequential and random read capability
- Page write mode with partial page write support
- Write protection for entire memory array
- Additional writable lockable page
- Self-timed write cycle (5ms max)
- High reliability
- Endurance: 1 million write cycles
- Data retention: 100 years
- HBM ESD: 4kV
- Latch-up immunity: ±200mA (25°C)
- Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
Em estoque: 500
500 Em estoque, envio imediato
Mínimo: 5Múltiplo: 5Unidade de venda: Piece
Adicionar à Lista BOM
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 5+ | $ 0.1278 | $ 0.64 |
| 50+ | $ 0.1015 | $ 5.08 |
| 150+ | $ 0.0883 | $ 13.25 |
| 500+ | $ 0.0785 | $ 39.25 |
| 3,000+ | $ 0.0705 | $ 211.50 |
| 6,000+ | $ 0.0666 | $ 399.60 |
Encapsulamento Padrão3000/Full Reel | ||
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Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | HGSEMI | |
| Emb. | SOT-23-5 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA | |
| Clock Frequency | 1MHz | |
| Access Time | 900ns | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | HGSEMI | |
| Emb. | SOT-23-5 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | 1MHz | |
| Access Time | 900ns | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
HG24C08/HG24C16 are I²C-compatible serial EEPROM devices. They feature an 8 Kbits (1 Kbytes) / 16 Kbits (2 Kbytes) memory array with 16-byte pages.
Recursos
Tradução por IA
- Single supply voltage and high-speed mode
- Minimum operating voltage down to 1.7V
- 400kHz/1MHz clock from 1.7V to 5.5V
- Low-power CMOS technology
- Read current 0.2mA (400kHz, typical)
- Write current 0.8mA (400kHz, typical)
- Schmitt trigger with filtered inputs for noise suppression
- Sequential and random read capability
- Page write mode with partial page write support
- Write protection for entire memory array
- Additional writable lockable page
- Self-timed write cycle (5ms max)
- High reliability
- Endurance: 1 million write cycles
- Data retention: 100 years
- HBM ESD: 4kV
- Latch-up immunity: ±200mA (25°C)
- Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8
C54140479 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Peças alternativas
| MPN | Fabricante | Tipo alternativo | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|---|
| AT24LC16M5/TR | HGSEMI | Similares | SOT-23-5 | 2,840 | $ 0.1301 | ||
| HG24C16M5/TR | HGSEMI | Similares | SOT-23-5 | 2,885 | $ 0.1246 | ||
| AT24C16M5/TR | HGSEMI | Similares | SOT-23-5 | 4,680 | $ 0.1297 | ||
| AT24C16M5-852/TR | HGSEMI | Similares | SOT-23-5 | 0 | $ 0.1279 |



