WPMtek MBR3065CT
| Fabricante | WPMtekAsian Brands |
| N.º de pieza fab. | MBR3065CT |
| Nº LCSC | C53159393 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | 65V 1 Pair Common Cathode 680mV@10A 30A TO-220F Single Diodes |
| Hoja de Datos | WPMtek MBR3065CT |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | WPMtek | |
| Emb. | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 65V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 680mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@65V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | WPMtek | |
| Emb. | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 65V | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 680mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@65V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Schottky barrier die
- Guard ring die structure for transient protection
- Low power consumption, high efficiency
- High surge capability
- High current capability and low forward voltage drop
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | WPMtek | |
| Emb. | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 65V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 680mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@65V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | WPMtek | |
| Emb. | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 65V | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 680mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@65V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 200A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Schottky barrier die
- Guard ring die structure for transient protection
- Low power consumption, high efficiency
- High surge capability
- High current capability and low forward voltage drop
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



