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Cmos CMSV60R180S6ZD
| Hersteller | CmosAsian Brands |
| Herst.-Teilenr. | CMSV60R180S6ZD |
| LCSC-Nr. | C49208406 |
| Verp. | DFN-8(8x8) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 600V 20A DFN-8(8x8) |
| Datenblatt | Cmos CMSV60R180S6ZD |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(8x8) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 28.6nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(8x8) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 28.6nC@10V | |
| Type | N-Channel |
Beschreibung
CMSV60R180S6ZD is a power MOSFET utilizing Cmos advanced super-junction technology to achieve ultra-low on-resistance and gate charge while reducing ringing tendency. As a result, it features extremely low switching losses, making it ideal for switching applications. Furthermore, these user-friendly devices incorporate an integrated Zener diode for enhanced robustness and excellent ESD capability, making them the ideal choice for designers.
Merkmale
- Multi-layer epitaxial chip technology
- Low on-resistance
- 100% avalanche tested
- RoHS compliant
Anwendungen
- Adapter
- PFC power stage
- DC-DC converter
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3728$ 1.3042 | $ 1.30 |
| 10+ | $ 1.1626$ 1.1045 | $ 11.05 |
| 30+ | $ 1.0477$ 0.9954 | $ 29.86 |
| 100+ | $ 0.9163$ 0.8705 | $ 87.05 |
| 500+ | $ 0.8589$ 0.8160 | $ 408.00 |
| 1,000+ | $ 0.8326$ 0.7910 | $ 791.00 |
Standardgehäuse5000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(8x8) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 28.6nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(8x8) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 28.6nC@10V | |
| Type | N-Channel |
Beschreibung
CMSV60R180S6ZD is a power MOSFET utilizing Cmos advanced super-junction technology to achieve ultra-low on-resistance and gate charge while reducing ringing tendency. As a result, it features extremely low switching losses, making it ideal for switching applications. Furthermore, these user-friendly devices incorporate an integrated Zener diode for enhanced robustness and excellent ESD capability, making them the ideal choice for designers.
Merkmale
- Multi-layer epitaxial chip technology
- Low on-resistance
- 100% avalanche tested
- RoHS compliant
Anwendungen
- Adapter
- PFC power stage
- DC-DC converter
C49208406 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CMSV65R105 | Cmos | DFN-8(8x8) | 2 | $1.7734 $1.8667 | ||
| CMSV60R190Q | Cmos | DFN-8(8x8) | 0 | $ 1.3647 |