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Truesemi TSP40N30M
| Produttore | TruesemiAsian Brands |
| Cod. Prod. | TSP40N30M |
| Cod. LCSC | C46855376 |
| Imballo | TO-220 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 300V 40A TO-220 |
| Scheda Tecnica | Truesemi TSP40N30M |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Truesemi | |
| Imballo | TO-220 | |
| Drain to Source Voltage | 300V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 145mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.958nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Truesemi | |
| Imballo | TO-220 | |
| Drain to Source Voltage | 300V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 145mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.958nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This power MOSFET is manufactured using TrueSemi's advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching power supplies and active power factor correction based on half-bridge topologies.
Caratteristiche
Traduzione AI
- 40A, 300V, max R<sub>DS(on)</sub> = 0.145Ω at V<sub>GS</sub> = 10V
- Low gate charge: Q<sub>g</sub> = 60 nC (typical)
- Low reverse transfer capacitance: C<sub>rss</sub> = 31 pF (typical)
- Lower EMI noise
- RoHS-compliant device
- 100% avalanche tested
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100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 50
50 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.986 | $ 0.99 |
| 10+ | $ 0.8009 | $ 8.01 |
| 50+ | $ 0.7099 | $ 35.50 |
| 100+ | $ 0.6173 | $ 61.73 |
| 500+ | $ 0.5637 | $ 281.85 |
| 1,000+ | $ 0.5345 | $ 534.50 |
Package Standard50/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Truesemi | |
| Imballo | TO-220 | |
| Drain to Source Voltage | 300V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 145mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.958nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Truesemi | |
| Imballo | TO-220 | |
| Drain to Source Voltage | 300V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 145mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.958nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This power MOSFET is manufactured using TrueSemi's advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching power supplies and active power factor correction based on half-bridge topologies.
Caratteristiche
Traduzione AI
- 40A, 300V, max R<sub>DS(on)</sub> = 0.145Ω at V<sub>GS</sub> = 10V
- Low gate charge: Q<sub>g</sub> = 60 nC (typical)
- Low reverse transfer capacitance: C<sub>rss</sub> = 31 pF (typical)
- Lower EMI noise
- RoHS-compliant device
- 100% avalanche tested
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| TSP45N30M | Truesemi | TO-220 | 27 | $ 1.1163 |