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Modelli EDAEasyEDA
VBsemi Elec IXTH20N65X2-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | IXTH20N65X2-VB |
| Cod. LCSC | C46527447 |
| Imballo | TO-247AC |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 20A TO-247AC |
| Scheda Tecnica | VBsemi Elec IXTH20N65X2-VB |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.322nF | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.322nF | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
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Caratteristiche
Traduzione AI
- Reduced reverse recovery time t<sub>rr</sub>, reverse recovery charge Q<sub>rr</sub>, and maximum reverse recovery current I<sub>RRM</sub>
- Low figure of merit (FOM) R<sub>on</sub> x Q<sub>g</sub>
- Low input capacitance (C<sub>iss</sub>)
- Low switching losses due to reduced Q<sub>rr</sub>
- Ultra-low gate charge (Q<sub>g</sub>)
- Avalanche energy rated (UIS)
Applicazioni
Traduzione AI
- Telecom
- Server and telecom power supplies
- Lighting
- High-intensity discharge (HID) lamps
- Fluorescent lamp ballast lighting
- Consumer electronics and computing
- ATX power supplies
- Industrial
- Welding
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
- Switched-mode power supplies (SMPS)
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 5
5 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 3.7832$ 3.2158 | $ 3.22 |
| 10+ | $ 3.3683$ 2.8631 | $ 28.63 |
| 30+ | $ 2.693$ 2.2891 | $ 68.67 |
| 90+ | $ 2.4278$ 2.0637 | $ 185.73 |
| 600+ | $ 2.3074$ 1.9613 | $ 1176.78 |
| 900+ | $ 2.2553$ 1.9171 | $ 1725.39 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.322nF | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.322nF | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Reduced reverse recovery time t<sub>rr</sub>, reverse recovery charge Q<sub>rr</sub>, and maximum reverse recovery current I<sub>RRM</sub>
- Low figure of merit (FOM) R<sub>on</sub> x Q<sub>g</sub>
- Low input capacitance (C<sub>iss</sub>)
- Low switching losses due to reduced Q<sub>rr</sub>
- Ultra-low gate charge (Q<sub>g</sub>)
- Avalanche energy rated (UIS)
Applicazioni
Traduzione AI
- Telecom
- Server and telecom power supplies
- Lighting
- High-intensity discharge (HID) lamps
- Fluorescent lamp ballast lighting
- Consumer electronics and computing
- ATX power supplies
- Industrial
- Welding
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
- Switched-mode power supplies (SMPS)
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| APT6021BLL-VB | VBsemi Elec | Simili | TO-247AC | 4 | $3.0816 $3.6254 | ||
| APT6025BLL-VB | VBsemi Elec | Simili | TO-247AC | 10 | $3.2158 $3.7832 | ||
| APT6025BVR-VB | VBsemi Elec | Simili | TO-247AC | 10 | $3.2158 $3.7832 | ||
| APT6029BLL-VB | VBsemi Elec | Simili | TO-247AC | 6 | $3.0816 $3.6254 | ||
| APT6030BVR-VB | VBsemi Elec | Simili | TO-247AC | 10 | $3.2158 $3.7832 |
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