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HXY MOSFET HPG712FBS23 product image
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HXY MOSFET HPG712FBS23

Hersteller
HXY MOSFETAsian Brands
Herst.-Teilenr.
HPG712FBS23
LCSC-Nr.
C42402075
Verp.
SOT-23
Kundennummer
Hauptmerkm.
ESD DIODE 7VWM 12VWM 19VC 32VC SOT-23
DatenblattHXY MOSFET HPG712FBS23
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100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-Preis(Nur als Referenz)Gesamtbetrag
5+$ 0.2425$ 0.2134$ 1.07
50+$ 0.1942$ 0.1709$ 8.55
150+$ 0.1736$ 0.1528$ 22.92
500+$ 0.1477$ 0.1300$ 65.00
3,000+$ 0.1362$ 0.1199$ 359.70
6,000+$ 0.1293$ 0.1138$ 682.80
Standardgehäuse3000/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
HerstellerHXY MOSFET
Verp.SOT-23
Clamping Voltage19V;32V
Operating Temperature-55℃~+125℃
Peak Pulse Current (Ipp)24A;15A
Peak Pulse Power Dissipation (Ppp)400W
Number of Channels1
Voltage - Breakdown7.5V;13.3V
typeESD
PolarityBidirectional
Reverse Leakage Current (Ir)1uA
Reverse Stand-Off Voltage (Vrwm)7V;12V

Beschreibung

KI-Übersetzung

The HPG712FBS23 device is designed to protect sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Its excellent clamping capability, low leakage current, low capacitance, and fast response time provide robust protection for designs exposed to ESD environments. The device offers designers flexibility to protect a single bidirectional line in applications where arrays are not suitable. Available in SOT-23 package.

Merkmale

KI-Übersetzung
  • Low capacitance.
  • Low clamping voltage.
  • ESD protection.
  • Compliant with IEC 61000-4-2: air discharge ±15kV, contact discharge ±8kV.
  • Product materials declared RoHS compliant and halogen-free.